Numerical analysis of InGaN/GaN-based blue light-emitting diode with graded indium composition barriers

초록

In this study, we proposed and numerically investigated graded indium barrier structures of various compositions in InGaN/GaN-based light-emitting diodes (LEDs) to improve their optical and electrical properties. Our simulation results showed that when using an InGaN barrier structure with an up/down-graded indium composition, the output power and internal quantum efficiency of LEDs at 200 mA increased by 2.49 and 2.44 times, respectively, relative to the standard barrier structure. In addition, the proposed structure shows reduced turn-on voltage and reduced efficiency droop. These results are attributed to the improvement of both the hole injection efficiency and uniform carrier distribution within multiple quantum wells. (C) 2013 Elsevier Ltd. All rights reserved.

키워드