280-GHz Rectangular Cavity Antenna Integrated in an 80-mu m InP Substrate

  • Choi, S. H.
  • Lee, I. J.
  • Jeon, S.
  • Kim, M.
Citations

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4
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SCOPUS

5

초록

An integrated-circuit antenna in the form of a rectangular cavity is fabricated inside an 80-mu m-thick InP substrate for terahertz applications. The metal-via fence surrounding the cavity prevents any substrate modes. The cavity size is optimized for the operation bandwidth of the fundamental resonant mode near 280 GHz. The antenna measurements performed using a miniature setup constructed inside a probe station show 6-dB matching bandwidth of 20 GHz with the peak efficiency of 52% at 275 GHz. The radiation patterns indicate a broadside main beam that matches the simulation and confirms the elimination of substrate modes.

키워드

InP-filled cavity antennaintegrated antennaterahertz antennaGHZTECHNOLOGYRECEIVERCMOS
제목
280-GHz Rectangular Cavity Antenna Integrated in an 80-mu m InP Substrate
저자
Choi, S. H.Lee, I. J.Jeon, S.Kim, M.
DOI
10.1109/LAWP.2016.2606650
발행일
2017
유형
Article
저널명
IEEE Antennas and Wireless Propagation Letters
16
페이지
837 ~ 839