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280-GHz Rectangular Cavity Antenna Integrated in an 80-mu m InP Substrate
- Choi, S. H.;
- Lee, I. J.;
- Jeon, S.;
- Kim, M.
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5초록
An integrated-circuit antenna in the form of a rectangular cavity is fabricated inside an 80-mu m-thick InP substrate for terahertz applications. The metal-via fence surrounding the cavity prevents any substrate modes. The cavity size is optimized for the operation bandwidth of the fundamental resonant mode near 280 GHz. The antenna measurements performed using a miniature setup constructed inside a probe station show 6-dB matching bandwidth of 20 GHz with the peak efficiency of 52% at 275 GHz. The radiation patterns indicate a broadside main beam that matches the simulation and confirms the elimination of substrate modes.
키워드
InP-filled cavity antenna; integrated antenna; terahertz antenna; GHZ; TECHNOLOGY; RECEIVER; CMOS
- 제목
- 280-GHz Rectangular Cavity Antenna Integrated in an 80-mu m InP Substrate
- 저자
- Choi, S. H.; Lee, I. J.; Jeon, S.; Kim, M.
- 발행일
- 2017
- 유형
- Article
- 권
- 16
- 페이지
- 837 ~ 839