Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass

Citations

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33

초록

In this study, we characterize multilevel bipolar switching in devices composed of Au/ZnO/ITO constructed on glass. The ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) depends on the starting sweep voltage. The HRS/LRS ratio increases from 10 to 10(4) as the starting sweep voltage changes from -1 to -3.5 V. Moreover, the Au/ZnO/ITO devices can complete more than 10(2) cycles and maintain their characteristics for up to 10 years. A more detailed description on the multilevel bipolar switching of our devices will be given in this paper. (C) 2011 Elsevier B.V. All rights reserved.

키워드

ReRAM; Resistive switching; ZnO; Multilevel; FILMS
제목
Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass
저자
Han, Yong; Cho, Kyoungah; Kim, Sangsig
DOI
10.1016/j.mee.2011.02.058
발행일
2011-08
유형
Article
저널명
Microelectronic Engineering
권
88
호
8
페이지
2608 ~ 2610