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Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass
- Han, Yong;
- Cho, Kyoungah;
- Kim, Sangsig
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32초록
In this study, we characterize multilevel bipolar switching in devices composed of Au/ZnO/ITO constructed on glass. The ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) depends on the starting sweep voltage. The HRS/LRS ratio increases from 10 to 10(4) as the starting sweep voltage changes from -1 to -3.5 V. Moreover, the Au/ZnO/ITO devices can complete more than 10(2) cycles and maintain their characteristics for up to 10 years. A more detailed description on the multilevel bipolar switching of our devices will be given in this paper. (C) 2011 Elsevier B.V. All rights reserved.
키워드
ReRAM; Resistive switching; ZnO; Multilevel; FILMS
- 제목
- Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass
- 저자
- Han, Yong; Cho, Kyoungah; Kim, Sangsig
- 발행일
- 2011-08
- 유형
- Article
- 권
- 88
- 호
- 8
- 페이지
- 2608 ~ 2610