Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass

Citations

WEB OF SCIENCE

32

초록

In this study, we characterize multilevel bipolar switching in devices composed of Au/ZnO/ITO constructed on glass. The ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) depends on the starting sweep voltage. The HRS/LRS ratio increases from 10 to 10(4) as the starting sweep voltage changes from -1 to -3.5 V. Moreover, the Au/ZnO/ITO devices can complete more than 10(2) cycles and maintain their characteristics for up to 10 years. A more detailed description on the multilevel bipolar switching of our devices will be given in this paper. (C) 2011 Elsevier B.V. All rights reserved.

키워드

ReRAMResistive switchingZnOMultilevelFILMS
제목
Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass
저자
Han, YongCho, KyoungahKim, Sangsig
DOI
10.1016/j.mee.2011.02.058
발행일
2011-08
유형
Article
저널명
Microelectronic Engineering
88
8
페이지
2608 ~ 2610