Charge trap flash memory using ferroelectric materials as a blocking layer

초록

In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr0.7Bi2.3Nb2O9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 mu s), and higher endurance (10(5) P/E cycles) with comparable retention properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4705411]

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