상세 보기
A Single-Ended NRZ Receiver With Gain-Enhanced Active-Inductive CTLE and Reference-Selection DFE for Memory Interfaces
- Choi, Jonghyuck;
- Choi, Yoonjae;
- Sim, Jincheol;
- Kwon, Youngwook;
- Park, Seungwoo;
- ... Kim, Chulwoo;
- 외 2명
WEB OF SCIENCE
15SCOPUS
19초록
We have proposed an 18-Gb/s single-ended receiver with gain-enhanced active-inductive (GE-AI) continuous-time linear equalizer (CTLE) and reference-selection (RS) decision-feedback equalizer (DFE). The proposed equalizers were optimized for single-ended memory interfaces. The GE-AI CTLE amplified the signal swing and obtained a boost factor from shunt peaking. In addition, it eliminated a single-to-differential amplifier (S2D) and amplifying stage from the analog front-end (AFE). The RS DFE extended the sampling margin without a current source for power saving without bandwidth reduction of the data path. A faster DFE loop delay was achieved with direct feedback from the comparator output to the RS MUX. The proposed receiver is the first work to employ the single-ended CTLE and DFE simultaneously. The implemented receiver equalizers compensated for the - 15-dB channel loss at 18 Gb/s. Optimized for the single-ended memory interfaces, the receiver achieved the highest energy efficiency of 0.14 pJ/bit and the best figure-of-merit (FoM) of 0.009 pJ/bit/dB compared with the latest receivers.
키워드
- 제목
- A Single-Ended NRZ Receiver With Gain-Enhanced Active-Inductive CTLE and Reference-Selection DFE for Memory Interfaces
- 저자
- Choi, Jonghyuck; Choi, Yoonjae; Sim, Jincheol; Kwon, Youngwook; Park, Seungwoo; Kim, Seongcheol; Sim, Changmin; Kim, Chulwoo
- 발행일
- 2024-02-08
- 유형
- Article; Early Access
- 권
- 59
- 호
- 4
- 페이지
- 1261 ~ 1270
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 10 페이지
- ISSN
- E 1558-173X
P 0018-9200