Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

초록

The less surface roughness scattering effects, owing to the unique operation principle, in junctionless nanowire transistors (JLT-NW) were shown by low-temperature characterization and 2D numerical simulation results. This feature could allow a better current drive under a high gate bias. In addition, the dominant scattering mechanisms in JLT-NW, with both a short (L-M = 30 nm) and a long channel (L-M = 10 mu m), were investigated through an in-depth study of the temperature dependence of transconductance (g(m)) behavior and compared to conventional inversion-mode nanowire transistors. (C) 2014 AIP Publishing LLC.

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