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초록
A high-power terahertz solid-state amplifier fabricated using 0.25 mu m InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 mu m. A significant amount of power of similar to 10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.
- 제목
- 300 GHz InP HBT amplifier with 10 mW output power
- 저자
- Yu, H. G.; Choi, S. H.; Jeon, S.; Kim, M.
- 발행일
- 2014-02-27
- 유형
- Article
- 권
- 50
- 호
- 5
- 페이지
- 377 ~ 378
- 언어
- ENG
- 출판사
- INST ENGINEERING TECHNOLOGY-IET
- 발행국가
- 영국
- 분량
- 2 페이지
- ISSN
- E 1350-911X
P 0013-5194