Single crystalline aluminum nanowires with ideal resistivity

Lee, J. W.; Kang, M. G.; Kim, B. -S.; Hong, B. H.; Whang, D.; Hwang, S. W.

doi:10.1016/j.scriptamat.2010.07.026

상세 보기

Single crystalline aluminum nanowires with ideal resistivity

Lee, J. W.;
Kang, M. G.;
Kim, B. -S.;
Hong, B. H.;
Whang, D.;
외 1명

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30

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35

초록

We present the stress-induced synthesis of aluminum nanowires having almost perfect crystallinity. Their resistivity is comparable to the lowest bulk value of aluminum, and thus unprecedentedly smaller than the ones observed in other metal nanostructures. We analyze the measured resistivity using the standard theory of scattering in metal wires, and the observed resistivity values are consistent with the infinite average grain size. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

키워드

Aluminum; Nanostructure; Electrical resistivity/conductivity; Stress-induced growth; COPPER NANOWIRES; GROWTH; FILMS

제목: Single crystalline aluminum nanowires with ideal resistivity

저자: Lee, J. W.; Kang, M. G.; Kim, B. -S.; Hong, B. H.; Whang, D.; Hwang, S. W.

DOI: 10.1016/j.scriptamat.2010.07.026

발행일: 2010-11

유형: Article

저널명: Scripta Materialia

권: 63

호: 10

페이지: 1009 ~ 1012