Simulation Studies of a Pixel-type 3-D Silicon Sensor

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초록

Silicon sensors with 3-D structures are expected to tolerate radiation levels higher than those of sensors based on normal planar technologies. We studied the performance of a single-sided 3-D silicon pixel-type sensor by using 3-D semiconductor simulation tools. We expect the 3-D silicon detector to have good charge collection efficiency and position resolution.

키워드

Silicon sensorSimulation3-D structuresRADIATION DETECTORS3D
제목
Simulation Studies of a Pixel-type 3-D Silicon Sensor
저자
Choi, SuyongGoh, JungwhanHa, KyunghoSeo, JiwoongYu, Intae
DOI
10.3938/jkps.58.1101
발행일
2011-05
유형
Article
저널명
Journal of the Korean Physical Society
58
5
페이지
1101 ~ 1104