Reconfigurable Combinational Logic Operations Using Triple-Gated Feedback Field-Effect Transistors for Logic-In-Memory Computing

  • Kim, Dongki; 
  • Shin, Yunwoo; 
  • Heo, Hyojoo; 
  • Cho, Kyoungah; 
  • Kim, Sangsig
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초록

Reconfigurability in logic-in-memory (LIM) enables highly integrated circuits to be used in data-intensive applications by performing several logic operations within a single circuit structure. In this study, the reconfigurable LIM (R-LIM) cell consisted of eight triple-gated feedback field-effect transistors (TG FBFETs) that were shared equally in the pull-up and pull-down networks. Because of the reconfigurable characteristics of the TG FBFET, the R-LIM cell performed AND, OR, NOT, and XOR operations without redesign of the circuit topology. Furthermore, the 2 x 2 R-LIM cell array executed half-adder, half-subtractor, 1:2 demultiplexer, and 4:2 encoder operations using a combination of AND, OR, NOT, and XOR operations. The logic results remained without an external power supply because of the memory characteristics of the TG FBFET used as a component of the R-LIM cell. The results of this study provide an effective method for designing highly integrated circuits for data-intensive computing systems.

키워드

combinational logic operations; logic cascading; reconfigurable logic-in-memory cell; reconfigurable logic-in-memory; triple-gated feedback field-effect transistor
제목
Reconfigurable Combinational Logic Operations Using Triple-Gated Feedback Field-Effect Transistors for Logic-In-Memory Computing
저자
Kim, Dongki; Shin, Yunwoo; Heo, Hyojoo; Cho, Kyoungah; Kim, Sangsig
DOI
10.1002/aelm.202500536
발행일
2026-02
유형
Article
저널명
Advanced Electronic Materials
권
12
호
4