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Reconfigurable Combinational Logic Operations Using Triple-Gated Feedback Field-Effect Transistors for Logic-In-Memory Computing
- Kim, Dongki;
- Shin, Yunwoo;
- Heo, Hyojoo;
- Cho, Kyoungah;
- Kim, Sangsig
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0초록
Reconfigurability in logic-in-memory (LIM) enables highly integrated circuits to be used in data-intensive applications by performing several logic operations within a single circuit structure. In this study, the reconfigurable LIM (R-LIM) cell consisted of eight triple-gated feedback field-effect transistors (TG FBFETs) that were shared equally in the pull-up and pull-down networks. Because of the reconfigurable characteristics of the TG FBFET, the R-LIM cell performed AND, OR, NOT, and XOR operations without redesign of the circuit topology. Furthermore, the 2 x 2 R-LIM cell array executed half-adder, half-subtractor, 1:2 demultiplexer, and 4:2 encoder operations using a combination of AND, OR, NOT, and XOR operations. The logic results remained without an external power supply because of the memory characteristics of the TG FBFET used as a component of the R-LIM cell. The results of this study provide an effective method for designing highly integrated circuits for data-intensive computing systems.
키워드
- 제목
- Reconfigurable Combinational Logic Operations Using Triple-Gated Feedback Field-Effect Transistors for Logic-In-Memory Computing
- 저자
- Kim, Dongki; Shin, Yunwoo; Heo, Hyojoo; Cho, Kyoungah; Kim, Sangsig
- 발행일
- 2026-02
- 유형
- Article
- 권
- 12
- 호
- 4