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A Wide-Load-Range and High-Slew Capacitor-Less NMOS LDO With Adaptive-Gain Nested Miller Compensation and Pre-Emphasis Inverse Biasing
- Park, Hyunjun;
- Jung, Woojoong;
- Kim, Minsu;
- Lee, Hyung-Min
WEB OF SCIENCE
40SCOPUS
55초록
This article proposes an output capacitor-less NMOS low-dropout regulator (LDO) using wide-range adaptive gain nested Miller compensation (WAG-NMC) and pre-emphasis inverse (PI) biasing. Due to WAG-NMC, the LDO can provide a wide range of load current (I-LOAD) from 0.1 to 300 mA while maintaining sufficiently high phase margin (PM) above 60(? )at all I-LOAD conditions. WAG-NMC also extends a loop bandwidth (BW) up to 17.5 MHz with using only small compensation capacitors (C-C) of 6.3 pF in total. Moreover, PI biasing enhances a slew rate (SR) at the gate of the NMOS power transistor by injecting an adaptive PI current into a supersource follower (SSF), which further improves transient response. The proposed LDO fabricated in a 180-nm CMOS process was fully integrated with an on-chip load capacitor (C-L) of 100 pF. The LDO ensures small undershoot and overshoot of 48 and 59 mV, respectively, against large ?I-LOAD of 299 mA due to wide-BW and high SR. The proposed LDO also achieves a best figure of merit (FoM) of 1.72 ps among the state of the arts.
키워드
- 제목
- A Wide-Load-Range and High-Slew Capacitor-Less NMOS LDO With Adaptive-Gain Nested Miller Compensation and Pre-Emphasis Inverse Biasing
- 저자
- Park, Hyunjun; Jung, Woojoong; Kim, Minsu; Lee, Hyung-Min
- 발행일
- 2023-06-07
- 유형
- Article; Early Access
- 권
- 58
- 호
- 10
- 페이지
- 1 ~ 13
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 13 페이지
- ISSN
- E 1558-173X
P 0018-9200