Cl₂/Ar 혼합가스를 이용한 VO₂ 박막의 유도결합 플라즈마 식각

초록

In this work, the etch characteristics of VO₂ thin films were investigated using inductively coupled plasma (ICP) of Cl₂/Ar gas mixtures. To analyze the plasma characteristics, a quadrupole mass spectrometer (QMS), an optical emission spectroscopy (OES), and a Langmuir probe measuring system were used. The surface reaction of the VO₂ thin films was investigated using X-ray photoelectron spectroscopy (XPS). It was found that an increase in Ar fraction in the Cl₂/Ar plasma at fixed gas pressure, input power, and bias power resulted in increasing VO₂ etch rate which reached a maximum value of 87.6 nm/min at 70-75 % Ar. It was confirmed that the etch rate of the VO2 films was mainly controlled by the ion flux. On the basis of measuring results, we will discuss possible etching mechanism of VO₂ film in the Cl₂/Ar plasma.

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