Failure Analysis of Ge2Sb2Te5 Based Phase Change Memory

초록

A phase change memory device, consisting of Ge2Sb2Te5 chalcogenide, a Mo electrode and a SiO2 dielectric layer, was fabricated in order to investigate the failure mechanism. During the pulsed mode switching of the device with a reset pulse (5.0 V, 90 ns) and a set pulse (1.5 V, 30 mu s), some devices failed to reset stuck. Those reset stuck devices showed a delaminated interface with decomposed Ge2Sb2Te5 chalcogenide. A thin layer of elemental Te or a Te rich phase was observed at the interface. A working device, switched over 600 times, shows no delamination between Ge2Sb2Te5 chalcogenide and the Mo electrode and no sign of decomposition. [DOI: 10.1143/JJAP.47.3372]

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