Fabrication and Characterization of an Enhancement-Mode Planar Resonant Tunneling Transistor

Son, SeungHun; Hwang, SungWoo; Ahn, Doyeol; Lee, JungIll; Park, YoungJu; Yu, YunSeop

doi:10.1109/TNANO.2009.2018109

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Fabrication and Characterization of an Enhancement-Mode Planar Resonant Tunneling Transistor

Son, SeungHun;
Hwang, SungWoo;
Ahn, Doyeol;
Lee, JungIll;
Park, YoungJu;
외 1명

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초록

We report the fabrication and characterization of a planar resonant tunneling transistor (PRTT) using a GaAs/AlGaAs heterostructure wafer. Our PRTT operates as an enhancement-mode device, and shows the negative differential resistance (NDR) modulated with the gate bias in an extremely wide range (from the fully depleted dot to the dot in a single-electron transistor regime). This NDR spectrum represents a full, gate-bias-modulated evolution of the 0-D states in a quantum dot. Our data are also consistent with the ground (E-1) and the first excited state (E-2) of the Fock-Darwin states.

키워드

Enhancement mode; Fock-Darwin states; in-plane gates (IPGs); resonant tunneling; ELECTRONIC STATES; QUANTUM-DOT; TRANSPORT; DIODES

제목: Fabrication and Characterization of an Enhancement-Mode Planar Resonant Tunneling Transistor

저자: Son, SeungHun; Hwang, SungWoo; Ahn, Doyeol; Lee, JungIll; Park, YoungJu; Yu, YunSeop

DOI: 10.1109/TNANO.2009.2018109

발행일: 2010-01

유형: Article

저널명: IEEE Transactions on Nanotechnology

권: 9

호: 1

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