Group III-nitride radial heterojunction nanowire light emitters

Mastro, Michael A.; Caldwell, Josh; Twigg, Mark; Simpkins, Blake; Glembocki, Orest; Holm, Ron T.; Eddy, Charles R., Jr.; Kub, Fritz; Kim, Hong-Yeol; Alin, Jaehui; Kim, Jihyun

상세 보기

Group III-nitride radial heterojunction nanowire light emitters

Mastro, Michael A.;
Caldwell, Josh;
Twigg, Mark;
Simpkins, Blake;
Glembocki, Orest;
외 6명

Citations

WEB OF SCIENCE

2

Citations

SCOPUS

2

초록

Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.

키워드

III-nitride; Nanowire; Defect; BAND-GAP; GROWTH; EDGE

제목: Group III-nitride radial heterojunction nanowire light emitters

저자: Mastro, Michael A.; Caldwell, Josh; Twigg, Mark; Simpkins, Blake; Glembocki, Orest; Holm, Ron T.; Eddy, Charles R., Jr.; Kub, Fritz; Kim, Hong-Yeol; Alin, Jaehui; Kim, Jihyun

발행일: 2008-12

유형: Article

저널명: Journal of Ceramic Processing Research

권: 9

호: 6

페이지: 584 ~ 587