A 325 GHz InP HBT Differential-Mode Amplifier

Hacker, J. B.; Lee, Y. M.; Park, H. J.; Rieh, J. -S.; Kim, M.

doi:10.1109/LMWC.2011.2116152

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A 325 GHz InP HBT Differential-Mode Amplifier

Hacker, J. B.;
Lee, Y. M.;
Park, H. J.;
Rieh, J. -S.;
Kim, M.

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초록

An MMIC amplifier operating at the highest reported frequency up to date for indium-phosphide double-heterojunction bipolar (DHBT) transistor technology is presented. The amplifier chain consists of seven unit-cell stages that contain differential-pair common-base HBTs and compact inverted microstrip matching networks. Amplifier operation in differential mode generates a virtual RF ground at a convenient location inside the unit cell. The measurements at 325 GHz show a small signal gain of 25 dB and a maximum output power of -1.5 dBm. An amplifier gain of greater than 20 dB is observed over 60 GHz bandwidth extending from 285 to 345 GHz.

키워드

InP HBT; monolithic microwave integrated circuit (MMIC); terahertz amplifier

제목: A 325 GHz InP HBT Differential-Mode Amplifier

저자: Hacker, J. B.; Lee, Y. M.; Park, H. J.; Rieh, J. -S.; Kim, M.

DOI: 10.1109/LMWC.2011.2116152

발행일: 2011-05

유형: Article

저널명: IEEE Microwave and Wireless Components Letters

권: 21

호: 5

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