Characterization of segregation-resistant impurities in TlBr material

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초록

In this study, the segregation coefficients of impurities were calculated using the Zone Refining (ZR) method, that widely employed purification technique for TlBr materials. Total 17 elements were analyzed, with segregation coefficients ranging from 0.579 to 1.805. Some elements exhibited a tendency to concentrate toward the front or back of the ingot, while others remained evenly distributed throughout the ingot. In terms of electrical and gamma spectroscopic characteristics, the heel of the ingot showed the worst performance, while the transport properties of the carriers exhibited the worst performance in the tip of the ingot. These results indicate that the impact of impurities on detector performance varies depending on the type of impurity. Certain impurities, which are not effectively removed by ZR, are uniformly distributed throughout the ingot regardless of position, hindering performance improvement of the detector. To address this, it is suggested that a new form of electrical purification process, conducted in parallel with ZR.

키워드

Thallium Bromide; Zone refine; Impurities; Room temperature semiconductor detector; (RTSD); PURIFICATION
제목
Characterization of segregation-resistant impurities in TlBr material
저자
Seo, Jiwon; Song, Seungho; Park, Beomjun; Yeom, Jung-Yeol
DOI
10.1016/j.matlet.2025.138102
발행일
2025-04-01
유형
Article
저널명
Materials Letters
권
384