Synthesis of Silicon Carbide Nanocrystals Using Waste Poly(vinyl butyral) Sheet

초록

SiC nanocrystals were prepared using waste poly(vinyl butyral) sheet as a carbon source. SiO2/poly(vinyl butyral) mixtures are converted to SiO2/pyrolytic carbon composites via pyrolysis at low temperatures (500 degrees C) in an Ar atmosphere. Subsequently, low-temperature magnesiothermic reduction and purification processes result in the formation of tiny SiC nanocrystals. The size of the synthesized SiC nanocrystals ranged from 3 to 12 nm, i.e., they are smaller than the SiO2 precursor offering large specific surface area of 175.76 m(2)/g and are single phase as 3C-SiC. Hence, 3C-SiC nanocrystals were successfully synthesized using waste poly(vinyl butyral) through this simple, inexpensive, and scalable process, which will be a new application in the recycling industry.

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