Realization of One-Diode-Type Resistive-Switching Memory with Cr-SrTiO3 Film

초록

The authors report a silicon-based one-diode-type resistive-switching memory (RRAM) device with self-rectifying properties and high electrical properties. The RRAM cell consisted of Al/Cr-SrTiO3/Si and revealed intrinsic diode properties, so that unwanted sneaky currents could be removed from an RRAM crossbar array without extra switching devices. The insulator-metal transition property of the proposed device was explained using the space-charge-limited conduction mechanism. The memory device showed good characteristics including high ON/OFF ratio (similar to 10(6)), low reset current (similar to 10(-11) A), high speed at low voltage (200 ns, 2 V), and reasonable endurance (>10(4) cycles) and retention characteristics (>10(4) s). (C) 2012 The Japan Society of Applied Physics

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