Low-energy spin-orbit torque MTJ-based non-volatile flip-flop with data-aware backup technique

Kang, G.; Kim, T.; Park, J.

doi:10.1049/el.2019.2059

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Low-energy spin-orbit torque MTJ-based non-volatile flip-flop with data-aware backup technique

Kang, G.;
Kim, T.;
Park, J.

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초록

Spin-orbit torque magnetic tunnel junction (MTJ) based non-volatile flip-flops (NVFFs) have been introduced to provide zero-leakage standby state without data loss in power-gating mode. In this Letter, the data-aware backup scheme for NVFF, where significant energy can be saved by performing data backup only when the stored data and the current data are different is proprosed. Low-area backup signal generator is also proposed for the proposed data backup scheme. The simulation results with 65 nm process show 88.7% reduction in backup energy when the stored data and the current data are equal.

키워드

random-access storage; magnetoelectronics; flip-flops; low-power electronics; magnetic tunnelling; magnetic circuits; data-aware backup technique; spin-orbit torque magnetic tunnel junction based nonvolatile flip-flops; zero-leakage standby state; power-gating mode; data-aware backup scheme; stored data; low-area backup signal generator; data backup scheme; backup energy; MTJ-based NVFFs; energy saving; size 65; 0 nm

제목: Low-energy spin-orbit torque MTJ-based non-volatile flip-flop with data-aware backup technique

저자: Kang, G.; Kim, T.; Park, J.

DOI: 10.1049/el.2019.2059

발행일: 2019-10-31

유형: Article

저널명: Electronics Letters

권: 55

호: 22

페이지: 1178 ~ 1179