Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

Kim, D. H.; Kim, D. K.; Cho, J. U.; Park, S. Y.; Isogami, S.; Tsunoda, M.; Takahashi, M.; Fullerton, E. E.; Kim, Y. K.

doi:10.1063/1.4709738

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Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

Kim, D. H.;
Kim, D. K.;
Cho, J. U.;
Park, S. Y.;
Isogami, S.;
... Kim, Y. K.;
외 3명

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초록

We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Omega mu m(2), respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm(2). This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709738]

키워드

BIAS-VOLTAGE-DEPENDENCE; ROOM-TEMPERATURE; MAGNETORESISTANCE

제목: Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

저자: Kim, D. H.; Kim, D. K.; Cho, J. U.; Park, S. Y.; Isogami, S.; Tsunoda, M.; Takahashi, M.; Fullerton, E. E.; Kim, Y. K.

DOI: 10.1063/1.4709738

발행일: 2012-05-01

유형: Article

저널명: Journal of Applied Physics

권: 111

호: 9