I-V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy

  • Choi, D. S.
  • Rheem, Y.
  • Yoo, B.
  • Myung, N. V.
  • Kim, Y. K.
Citations

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초록

We report the measurement of the electrical resistivity of a vertical single Ni nanowire. A vertical array of Ni nanowires was fabricated on a Si substrate by electrodeposition using a nanoporous alumina template. The Ni nanowires possessed a face-centered-cubic polycrystalline structure. A voltage-applied atomic force microscope was used to make a nanometer-scale point contact on top of the vertical grown single Ni nanowire. The measured resistance was 1.1 M Omega for a nanowire with length of 3 mu m and diameter of 20 nm. (C) 2009 Elsevier B.V. All rights reserved.

키워드

Single Ni nanowireVoltage-applied atomic force microscopyElectrical resistanceMAGNETIZATION REVERSALMAGNETORESISTANCE
제목
I-V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy
저자
Choi, D. S.Rheem, Y.Yoo, B.Myung, N. V.Kim, Y. K.
DOI
10.1016/j.cap.2009.12.036
발행일
2010-07
유형
Article
저널명
Current Applied Physics
10
4
페이지
1037 ~ 1040