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I-V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy
- Choi, D. S.;
- Rheem, Y.;
- Yoo, B.;
- Myung, N. V.;
- Kim, Y. K.
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12초록
We report the measurement of the electrical resistivity of a vertical single Ni nanowire. A vertical array of Ni nanowires was fabricated on a Si substrate by electrodeposition using a nanoporous alumina template. The Ni nanowires possessed a face-centered-cubic polycrystalline structure. A voltage-applied atomic force microscope was used to make a nanometer-scale point contact on top of the vertical grown single Ni nanowire. The measured resistance was 1.1 M Omega for a nanowire with length of 3 mu m and diameter of 20 nm. (C) 2009 Elsevier B.V. All rights reserved.
키워드
Single Ni nanowire; Voltage-applied atomic force microscopy; Electrical resistance; MAGNETIZATION REVERSAL; MAGNETORESISTANCE
- 제목
- I-V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy
- 저자
- Choi, D. S.; Rheem, Y.; Yoo, B.; Myung, N. V.; Kim, Y. K.
- 발행일
- 2010-07
- 유형
- Article
- 권
- 10
- 호
- 4
- 페이지
- 1037 ~ 1040