Self-catalytic growth of silicon nanowires on stainless steel

  • Kim, Myoung-Ha; 
  • Park, Yong-Hee; 
  • Kim, Ilsoo; 
  • Park, Tae-Eon; 
  • Sung, Yun-Mo; 
  • 외 1명
Citations

WEB OF SCIENCE

6
Citations

SCOPUS

8

초록

Silicon nanowires were grown on a stainless steel substrate using a vapor-liquid-solid mechanism in self-catalytic mode. The multi-component Fe-Cr-Ni-Mn-Si catalyst that was formed from the substrate leads the growth of single-crystal Si nanowires with lengths of several micrometers and diameters ranging from 100 to 150 nm. A systematic investigation of the processing parameters revealed that the hydrogen flow rate is critical to the growth of the nanowires. At a high flow rate that exceeds 1000 sccm, the substrate is embrittled by H-2, and liquid droplets, which lead the growth of nanowires by the vapor-liquid-solid mechanism, are formed on the substrate. Electrical transport measurements indicated that the nanowires grown with the multi-component catalyst have electrical properties comparable to those grown by a single-component Ti catalyst. (C) 2010 Elsevier B.V. All rights reserved.

키워드

Nanomaterials; Crystal growth; Semiconductors; HYDROGEN; SI
제목
Self-catalytic growth of silicon nanowires on stainless steel
저자
Kim, Myoung-Ha; Park, Yong-Hee; Kim, Ilsoo; Park, Tae-Eon; Sung, Yun-Mo; Choi, Heon-Jin
DOI
10.1016/j.matlet.2010.06.024
발행일
2010-11-15
유형
Article
저널명
Materials Letters
권
64
호
21
페이지
2306 ~ 2309