Characterization of erbium chloride seeded gallium nitride nanocrystals

Ahn, J.; Mastro, M. A.; Freitas, J. A., Jr.; Kim, H. -Y.; Holm, R. T.; Eddy, C. R.; Hite, J.; Maximenko, S. I.; Kim, J.

doi:10.1016/j.tsf.2008.08.170

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Characterization of erbium chloride seeded gallium nitride nanocrystals

Ahn, J.;
Mastro, M. A.;
Freitas, J. A., Jr.;
Kim, H. -Y.;
Holm, R. T.;
외 4명

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초록

A novel erbium chloride seeded growth process was developed for the growth and fabrication of erbium doped GaN nanocrystals. This erbium chloride seeded technique simplifies the delivery of erbium into a metal organic chemical vapor deposition system. Additionally, this selective growth of the GaN nanocrystal only occurred in the presence of the ErCl3 seed. Strong green emission, distinctive of the Er3+ ion, was observed in the GaN nanocrystals. (C) 2008 Elsevier B.V All rights reserved.

키워드

Gallium; Nitrides; Nanocrystal; Phonon; ER-IMPLANTED GAN; DOPED GAN; CATHODOLUMINESCENCE; PHOTOLUMINESCENCE; MICROSTRUCTURE; SEMICONDUCTORS; SPECTROSCOPY; LUMINESCENCE; GROWTH

제목: Characterization of erbium chloride seeded gallium nitride nanocrystals

저자: Ahn, J.; Mastro, M. A.; Freitas, J. A., Jr.; Kim, H. -Y.; Holm, R. T.; Eddy, C. R.; Hite, J.; Maximenko, S. I.; Kim, J.

DOI: 10.1016/j.tsf.2008.08.170

발행일: 2008-12-01

유형: Article

저널명: Thin Solid Films

권: 517

호: 3

페이지: 1111 ~ 1114