A 270-GHz CMOS Triple-Push Ring Oscillator With a Coupled-Line Matching Network

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초록

A design procedure is proposed for triple-push ring oscillators, and an oscillator employing a coupled line-matching network is developed following the procedure. This stepwise procedure, which uses power-dependent Z-parameters of transistors, is applied to the design of each amplifier stage constituting a ring oscillator based on its steady-state oscillation condition. It is verified with both L-section and T-section topologies assumed for the load of the amplifier stages of a given triple-push ring oscillator, and the differences between the two topologies are compared. Based on the procedure, a 270 GHz triple-push ring oscillator that employs coupled lines for matching networks has been developed in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The circuit benefits from the advantages of coupled lines such as compact area and simplified layout. The fabricated oscillator exhibits a measured oscillation frequency of around 270 GHz and output power of -10.9 dBm, with phase noise of -96 dBc/Hz at 10 MHz offset.

키워드

complementary metal-oxide-semiconductor (CMOS)coupled linesharmonic generationmillimeter waveoscillatorsring oscillatorssubmillimeter waveterahertztriple pushHIGH-EFFICIENCYDESIGNVCO
제목
A 270-GHz CMOS Triple-Push Ring Oscillator With a Coupled-Line Matching Network
저자
Kim, SooyeonYoon, DaekeunRich, Jae-Sung
DOI
10.1109/TTHZ.2019.2923556
발행일
2019-09
유형
Article
저널명
IEEE Transactions on Terahertz Science and Technology
9
5
페이지
449 ~ 462