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Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics
- Kong, Heesung;
- Cho, Kyoungah;
- Lee, Hosang;
- Lee, Seungjun;
- Lim, Junhyung;
- ... Kim, Sangsig
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17초록
In this study, we investigated the electrical characteristics of amorphous indium-tin-gallium-zinc-oxide thinfilm transistors (TFTs) (a-ITGZO TFTs) with HfO2 and HfAlO gate dielectrics. The mobilities of the a-ITGZO TFTs with HfO2 and HfAlO were 32.3 and 26.4 cm(2)/V &.s, respectively. The TFT with HfO2 showed a subthreshold swing (SS) of 206 mV/dec and a hysteresis window of 0.60 V, and the TFT with HfAlO showed an SS of 160 mV/dec and a hysteresis window of 0.12 V. The hysteresis windows were related to the interface trap density. The TFT with HfO2 was more vulnerable to positive bias stress; in contrast, the TFT with HfAlO operated stably even after it experienced positive and negative bias stresses for 3000 s.
키워드
Amorphous indium-tin-gallium-zinc-oxide; Hafnium oxide; Hafnium aluminum oxide; Hysteresis; Positive gate-bias stress; Negative gate-bias stress; THIN-FILM TRANSISTORS; TEMPERATURE FABRICATION; HFO2/AL2O3
- 제목
- Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics
- 저자
- Kong, Heesung; Cho, Kyoungah; Lee, Hosang; Lee, Seungjun; Lim, Junhyung; Kim, Sangsig
- 발행일
- 2022-06-01
- 유형
- Article
- 권
- 143