D-Band Heterodyne Integrated Imager in a 65-nm CMOS Technology

초록

A D-band heterodyne integrated imager, consisting of a mixer, an oscillator, an IF amplifier, and an IF detector, has been developed in a 65-nm CMOS technology. A measured responsivity of 720 kV/W and noise equivalent power (NEP) of 0.9 pW/Hz(1/2) were obtained at 125 GHz. A total dc power of 74 mW was dissipated. The chip size is 1200 x 800 mu m(2) including contact pads and an input balun. A D-band image was acquired with the imager serving as a detector. A significant resolution enhancement was demonstrated with a near-field imaging achieved by a metal plate with a pinhole in the imaging setup.

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