Use of adaptive network fuzzy inference system to predict plasma charging damage on electrical MOSFET properties

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초록

A prediction model of plasma-induced charging damage is presented. The model was constructed using adaptive network fuzzy inference system (ANFIS). The prediction performance of ANFIS model was optimized as a function of training factors, including a step-size, a normalization factor, and type of membership function. Charging damage data were obtained from antenna-structured MOSFET with the variations in process parameters. For a systematic modeling, the experiment was characterized by means of a face-centered Box Wilson experiment. Electrical properties modeled include a threshold voltage (V), a subthreshold swing (S), and a transconductance (G). Both S and G were found to be considerably affected by the normalization factor. For the variations in the type of membership function, either V or S was the most significantly influenced. The optimized root mean square errors are about 0.041 (V), 5.040 (mV/decade), and 12.311 (x 10(-6)/Omega), respectively. Better predictions were demonstrated against statistical regression models and the improvements were even more than 15% for V and S models. (C) 2008 Elsevier Ltd. All rights reserved.

키워드

Charging damageMetal-oxide-semiconcluctor field-effect transistorsAdaptive network fuzzy inference systemPlasma
제목
Use of adaptive network fuzzy inference system to predict plasma charging damage on electrical MOSFET properties
저자
Kim, ByungwhanKwon, Hee JuChoi, Seongjin
DOI
10.1016/j.eswa.2008.07.034
발행일
2009-04
유형
Article
저널명
Expert Systems with Applications
36
3
페이지
6570 ~ 6573