Array of Single-Walled Carbon Nanotube Intrajunction Devices Fabricated via Type Conversion by Partial Coating with beta-Nicotinamide Adenine Dinucleotide

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초록

The fabrication of aligned single-walled, carbon nanotube (SWCNT) intratube junction devices by partially coating pristine SWCNTs with a beta-nicotinamide adenine dinucleotide (NADH) solution and subsequent annealing at 150 C is reported. Gate-bias-dependent rectification behavior is observed with a rectification ratio of >10(3) at +/- 1 V. A comparative study with p-n-junction devices of randomly networked SWCNTs confirms the advantage of using aligned SWCNTs with substantially better rectifying characteristics due to the selective removal of metallic tubes by electrical breakdown. The gate dependence of the intratube p-n-junction in the forward and backward directions is attributed to the difference in the shift of the Fermi levels (forward bias) and the enhanced direct tunneling (reverse bias), as suggested by band-diagram modeling. This work suggests a potential application of aligned SWCNT intratube p-n-junction devices in the future of nanoelectronic circuits.

키워드

carbon nanotubesdiodesjunctionsNADHp-n type conversionALIGNED ARRAYSLARGE-SCALEGROWTHPERFORMANCEROUTE
제목
Array of Single-Walled Carbon Nanotube Intrajunction Devices Fabricated via Type Conversion by Partial Coating with beta-Nicotinamide Adenine Dinucleotide
저자
Yoon, JangyeolPark, JaehyunKim, JunsungKim, Gyu TaeHa, Jeong Sook
DOI
10.1002/adfm.201100265
발행일
2011-07-08
유형
Article
저널명
Advanced Functional Materials
21
13
페이지
2515 ~ 2521