Compositional homogeneity and X-ray topographic analyses of CdTexSe1-x grown by the vertical Bridgman technique

  • Roy, U. N.; 
  • Bolotnikov, A. E.; 
  • Camarda, G. S.; 
  • Cui, Y.; 
  • Hossain, A.; 
  • ... Lee, K.; 
  • ... Lee, W.; 
  • 외 5명
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7

초록

We grew CdTexSe1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS' X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTexSe1-x crystals. We noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks. Published by Elsevier B.V.

키워드

Characterization; Defects; Te-inclusions; Subgrain boundary; CdTeSe; Semiconducting II-VI materials; CDTE; CRYSTAL; PERFORMANCE; SEGREGATION; DEFECTS
제목
Compositional homogeneity and X-ray topographic analyses of CdTexSe1-x grown by the vertical Bridgman technique
저자
Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, K.; Lee, W.; Tappero, R.; Yang, Ge; Cui, Y.; Burger, A.; James, R. B.
DOI
10.1016/j.jcrysgro.2014.10.057
발행일
2015-02-01
유형
Article
저널명
Journal of Crystal Growth
권
411
페이지
34 ~ 37