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Ga2O3:ITO Transparent Conducting Electrodes for Near-Ultraviolet Light-Emitting Diodes
- Kim, Su Jin;
- Park, Sang Young;
- Kim, Kyeong Heon;
- Kim, Suk Won;
- Kim, Tae Geun
Citations
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17Citations
SCOPUS
19초록
Herein, a Ga2O3-based indium tin oxide (Ga2O3:ITO) thin film is proposed as a replacement for ITO in near-ultraviolet light-emitting diodes (NUV LEDs), and its electrical and optical properties are optimized. The measured sheet resistance and optical transmittance of the Ga2O3: ITO thin film were 49 Omega/sq and 93.8% at 405 nm wavelength after optimization, whereas those of ITO films were 52 Omega/sq and 84.4% at that wavelength, respectively. In addition, we found that at 20 mA the output power of the NUV LEDs with Ga2O3: ITO top electrodes was 55% greater than that of those with ITO top electrodes.
키워드
Ultraviolet light-emitting diode; transparent conducting electrode; Ga2O3:ITO; cosputtering; ELECTRICAL-PROPERTIES; HEAT-TREATMENT; OXIDE
- 제목
- Ga2O3:ITO Transparent Conducting Electrodes for Near-Ultraviolet Light-Emitting Diodes
- 저자
- Kim, Su Jin; Park, Sang Young; Kim, Kyeong Heon; Kim, Suk Won; Kim, Tae Geun
- 발행일
- 2014-02
- 유형
- Article
- 권
- 35
- 호
- 2
- 페이지
- 232 ~ 234
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 3 페이지
- ISSN
- E 1558-0563
P 0741-3106