High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared

Choi, Woong; Cho, Mi Yeon; Konar, Aniruddha; Lee, Jong Hak; Cha, Gi-Beom; Hong, Soon Cheol; Kim, Sangsig; Kim, Jeongyong; Jena, Debdeep; Joo, Jinsoo; Kim, Sunkook

doi:10.1002/adma.201201909

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High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared

Choi, Woong;
Cho, Mi Yeon;
Konar, Aniruddha;
Lee, Jong Hak;
Cha, Gi-Beom;
... Kim, Sangsig;
... Joo, Jinsoo;
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초록

Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm(2)V(-1)s(-1)), near-ideal subthreshold swings (similar to 70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.

키워드

MoS2; phototransistors; transition metal dichalcogenide; PHOTOCONDUCTIVITY; TRANSISTORS

제목: High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared

저자: Choi, Woong; Cho, Mi Yeon; Konar, Aniruddha; Lee, Jong Hak; Cha, Gi-Beom; Hong, Soon Cheol; Kim, Sangsig; Kim, Jeongyong; Jena, Debdeep; Joo, Jinsoo; Kim, Sunkook

DOI: 10.1002/adma.201201909

발행일: 2012-11-14

유형: Article

저널명: Advanced Materials

권: 24

호: 43

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