A 15-Gb/s Single-Ended NRZ Receiver Using Self-Referenced Technique With 1-Tap Latched DFE for DRAM Interfaces

  • Kim, Seongcheol; 
  • Sim, Jincheol; 
  • Park, Hyunsu; 
  • Choi, Yoonjae; 
  • Choi, Jonghyuck; 
  • ... Kim, Chulwoo
Citations

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Citations

SCOPUS

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초록

This brief presents a single-ended (SE) receiver (RX) with a self-referenced (SR) technique using sample and hold (S&H) circuits. The proposed RX does not require a reference voltage (VREF) for data recovery by comparing the present data with previous data. The RX was implemented as halfrate architecture to halve the clock frequency and facilitate the S&H operation. Moreover, the proposed decision feedback equalizer (DFE) is suitable for SR RX and improves the reliability of RX by eliminating inter-symbol interference (ISI). The prototype RX, fabricated using 28-nm CMOS technology, occupies a 0.0016 mm(2) active area. The measurement result of the proposed RX achieves a bit-error-rate (BER) under 10(-12) with a 15-Gb/s data rate in a 17-inch PCB FR4 channel. The RX consumes 13.56 mW of power and has a power efficiency of 0.90 pJ/bit.

키워드

Single-ended receiver; self-referenced; decision feedback equalizer; DRAM interface; BINARY TRANSCEIVER; 0.13-MU-M CMOS
제목
A 15-Gb/s Single-Ended NRZ Receiver Using Self-Referenced Technique With 1-Tap Latched DFE for DRAM Interfaces
저자
Kim, Seongcheol; Sim, Jincheol; Park, Hyunsu; Choi, Yoonjae; Choi, Jonghyuck; Kim, Chulwoo
DOI
10.1109/TCSII.2022.3208280
발행일
2023-01-01
유형
Article
저널명
IEEE Transactions on Circuits and Systems II: Express Briefs
권
70
호
1
페이지
101 ~ 105