Transport Properties of Magnetic Tunnel Junctions Comprising NiFeSiB/CoFeB Hybrid Free Layers

  • Cho, Ji Ung
  • Kim, Do Kyun
  • Tan, Reasmey P.
  • Isogami, Shinji
  • Tsunoda, Masakiyo
  • ... Kim, Young Keun
  • 외 1명
Citations

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초록

We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both type of structures, exhibit the same or a higher amplitude (up to 230% measured at room temperature in the case of top-type device), comparing to the case of a single CoFeB free layer. These results suggest that hybrids free layers can be used as good candidates for MTJs with reduced saturation magnetization while keeping a high TMR ratio.

키워드

Amorphoushybrid free layermagnetic tunnel junctionNiFeSiBROOM-TEMPERATUREMAGNETORESISTANCE
제목
Transport Properties of Magnetic Tunnel Junctions Comprising NiFeSiB/CoFeB Hybrid Free Layers
저자
Cho, Ji UngKim, Do KyunTan, Reasmey P.Isogami, ShinjiTsunoda, MasakiyoTakahashi, MigakuKim, Young Keun
DOI
10.1109/TMAG.2009.2018574
발행일
2009-06
유형
Article; Proceedings Paper
저널명
IEEE Transactions on Magnetics
45
6
페이지
2364 ~ 2366