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Transport Properties of Magnetic Tunnel Junctions Comprising NiFeSiB/CoFeB Hybrid Free Layers
- Cho, Ji Ung;
- Kim, Do Kyun;
- Tan, Reasmey P.;
- Isogami, Shinji;
- Tsunoda, Masakiyo;
- ... Kim, Young Keun;
- 외 1명
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4초록
We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both type of structures, exhibit the same or a higher amplitude (up to 230% measured at room temperature in the case of top-type device), comparing to the case of a single CoFeB free layer. These results suggest that hybrids free layers can be used as good candidates for MTJs with reduced saturation magnetization while keeping a high TMR ratio.
키워드
- 제목
- Transport Properties of Magnetic Tunnel Junctions Comprising NiFeSiB/CoFeB Hybrid Free Layers
- 저자
- Cho, Ji Ung; Kim, Do Kyun; Tan, Reasmey P.; Isogami, Shinji; Tsunoda, Masakiyo; Takahashi, Migaku; Kim, Young Keun
- 발행일
- 2009-06
- 유형
- Article; Proceedings Paper
- 권
- 45
- 호
- 6
- 페이지
- 2364 ~ 2366