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ISSN
P 1229-4039 E 2734-0481
출판사
한국언어학회
국가
SOUTH KOREA
발행 상태
비활성

데이터베이스 수록 정보

KCI 2009-2025 (17년)
KCI 등재 2001-2026 (26년)
KCI 등재후보 1999-2001 (3년)

전체 57건 중 1번부터 10번까지의 결과를 표시합니다.

2026
Article

Reduced Leakage and Enhanced Endurance via an ITO Oxygen Reservoir Layer in HZO Ferroelectric Capacitors

  • Choi, Haevin ; 
  • Park, Hyeonjung ; 
  • Han, Changwoo ; 
  • Choi, Myeongjae ; 
  • Choi, Yejoo ; 
  • ... Shin, Changhwan
  • 2026-04
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2025
Article

Effect of Bottom Electrode Annealing Temperature and Atmosphere on Endurance Characteristics of Ferroelectric Hf0.5Zr0.5O2 Capacitors

  • Park, Hyeonjung ; 
  • Han, Changwoo ; 
  • Choi, Yejoo ; 
  • Choi, Myeongjae ; 
  • Won, Sangmin ; 
  • ... Shin, Changhwan
  • 2025-11
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2023
Article

Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi2 Through Ta Interlayer for Diffusion Barrier

  • Kim, Min-Su ; 
  • Hwang, Seong-Hyun ; 
  • Kim, Seung-Hwan ; 
  • Kim, Jong-Hyun ; 
  • Park, Euyjin ; 
  • ... Yu, Hyun-Yong ; 
  • 외 1명
  • 2023-07
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Impact of CF4/O2Plasma Passivation on Endurance Performance of Zr-Doped HfO2Ferroelectric Film

  • 2023-05-01
  • IEEE Electron Device Letters
  • Institute of Electrical and Electronics Engineers Inc.
2022
Article

Impact of Various Pulse-Bases on Charge Boost in Ferroelectric Capacitors

  • Kim, Gwon ; 
  • Lim, Jaehyuk ; 
  • Eom, Deokjoon ; 
  • Choi, Yejoo ; 
  • Kim, Hyoungsub ; 
  • ... Shin, Changhwan
  • 2022-11
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2021
Article

Single Silicon Neuron Device Enabling Neuronal Oscillation and Stochastic Dynamics

  • 2021-05
  • IEEE Electron Device Letters
  • Institute of Electrical and Electronics Engineers Inc.
2020
Article

Analysis of Drain Linear Current Turn-Around Effect in Off-State Stress Mode in pMOSFET

  • Jung, Seung-Geun ; 
  • Lee, Sul-Hwan ; 
  • Kim, Choong-Ki ; 
  • Yoo, Min-Soo ; 
  • Yu, Hyun-Yong
  • 2020-06
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2019
Article

Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on- Insulator n-MOSFETs

  • Lim, Hyeong-Rak ; 
  • Kim, Seong Kwang ; 
  • Han, Jae-Hoon ; 
  • Kim, Hansung ; 
  • Geum, Dae-Myeong ; 
  • ... Ju, Byeong-Kwon ; 
  • 외 3명
  • 2019-09
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2018
Article

Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain

  • Kim, Seung-Geun ; 
  • Kim, Gwang-Sik ; 
  • Kim, Seung-Hwan ; 
  • Yu, Hyun-Yong
  • 2018-12
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

A Simple Method for Estimation of Silicon Film Thickness in T-Gate Junction less Transistors

  • Jeon, Dae-Young ; 
  • Park, So Jeong ; 
  • Mouis, Mireille ; 
  • Barraud, Sylvain ; 
  • Kim, Gyu-Tae ; 
  • 외 1명
  • 2018-09
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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