제어.로봇.시스템학회 논문지

ISSN
P 1976-5622 E 2233-4335
출판사
제어·로봇·시스템학회
국가
SOUTH KOREA
발행 상태
활성

데이터베이스 수록 정보

CiteScore 2011-2025 (15년)
KCI 2009-2025 (17년)
KCI 등재 2002-2026 (25년)
KCI 등재후보 1999-2001 (3년)
Scopus 2008-2026 (19년)
SJR 2009-2020, 2022-2025 (16년)

전체 29건 중 1번부터 10번까지의 결과를 표시합니다.

2025
Article

Ultraviolet Light-Driven Artificial Neuromorphic Properties in Organic Transistors for Reservoir Computing and Encrypted Communication

  • Khan, Muhammad Asghar ; 
  • Kang, Yelim ; 
  • Khan, Muhammad Farooq ; 
  • Rehman, Shania ; 
  • Lee, Min Jong ; 
  • ... Shim, Jae Won ; 
  • 외 5명
  • 2025-09-26
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Backside Contact Misalignment-Induced TDDB in BSPDN CFET

  • 2025-09
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Analysis of Ring Oscillator Characteristics Induced by Line Edge Roughness Using Convolution Neural Network

  • 2025-05-23
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Enhanced Ferroelectricity and Endurance Using Nanolaminate-Gradient-Structured Hf<sub>X</sub>Zr<sub>1-X</sub>O<sub>2</sub>Films

  • 2025-01-09
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2024
Article

Fine-Tuning Hole Collection via Metal Pseudo-Halogenated Thin-Film Treatment for Propelling Advancements in Versatile Platforms

  • Lee, Min Jong ; 
  • Oh, Seunghyun ; 
  • Saeed, Muhammad Ahsan ; 
  • Kang, Yelim ; 
  • Lee, Gyeong Min ; 
  • ... Shim, Jae Won ; 
  • 외 2명
  • 2024-06-10
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Effects of Hydrogen Doping on a-GIZO Thin-Film Transistors With Hafnium Dioxide Gate Insulators Formed by Atomic Layer Deposition at Different Temperatures

  • 2024-01-26
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2023
Article

Effects of Al<sub>2</sub>O<sub>3</sub>Interfacial Layer Thicknessfor HZO/InGaAs Ferroelectric CapacitorsWith Superior Polarization andMOS Interface Properties

  • Ko, Kyul ; 
  • Ahn, Dae-Hwan ; 
  • Suh, Hoyoung ; 
  • Ju, Byeong-Kwon ; 
  • Han, Jae-Hoon
  • 2023-11-02
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Leakage Current Minimization of TiO2-Based Metal-Insulator-Metal Capacitors Using High-Work-Function In2O3 and V2O5 Ultrathin Interlayers

  • 2023-06-28
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors

  • Lee, Sumi ; 
  • Ronchi, Nicolo ; 
  • Bizindavyi, Jasper ; 
  • Popovici, Mihaela I. ; 
  • Banerjee, Kaustuv ; 
  • ... Shin, Changhwan ; 
  • 외 3명
  • 2023-05-01
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2021
Article

Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors

  • Park, Yeong-Hun ; 
  • Yi, Boram ; 
  • Kim, Seung-Hwan ; 
  • Shim, Ju-Hyun ; 
  • Song, Hyeong-Sub ; 
  • ... Yang, Ji-Woon ; 
  • 외 3명
  • 2021-08
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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