ScholarWorks@Korea University: Yu, Hyun Yong

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Yu, Hyun Yong (유현용)

College of Engineering (School of Electrical Engineering)

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Tel 02-3290-4830
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germanium:17||Fermilevel unpinning:7||CMOS:6||Schottky barrier height:6||specific contact resistivity:6||contact resistance:5||Contact resistance:5||FinFET:5||Fermilevel pinning:4||molybdenum disulfide:4||#8208:4||Specific Contact Resistivity:4||metalinterlayersemiconductor structure:3||titanium dioxide:3||IIIV semiconductor:3||Source/Drain Contact:3||FermiLevel Pinning:3||Germanium:3||gallium arsenide:3||source/drain contact:3||metalinduced gap state:3||tantalum nitride:3||interlayer:3||Pentacene:2||source/drain:2||3D technology computer aided design (TCAD) simulation:2||drain:2||interfacial layer:2||passivation:2||Schottky barrier:2||surface passivation:2||CMOS inverter:2||SF6 plasma:2||Variation:2||random dopant fluctuation (RDF):2||Thermal stability:2||nitrogen doping:2||artificial synapse:2||pattern recognition:2||neuromorphic system:2||Graphene:2||doping:2||optoelectronic devices:2||memristor:2||contact resistivity:2||Complementary FET (CFET):2||artificial neural network:2||Specific contact resistivity:1||low thermal budget process:1||Stress measurement:1||Random access memory:1||twodimensional materials:1||MoS2 phototransistor:1||threshold voltage hysteresis:1||metalinter layersemiconductor source:1||3D TCAD:1||Interfacial dipole:1||MoS2:1||Atomic layer deposition (ALD):1||transfer length method (TLM):1||Titanium Nitride:1||nondegenerate doping:1||WSe2:1||Metalinterlayersemiconductor:1||edge contact:1||Plasma hydrogen passivation:1||device performance:1||Shallow junction:1||Activation energy:1||Polycrystalline germanium:1||Solid phase crystallization:1||monolithic:1||2D channel:1||chargesharing time:1||2D&:1||oxygen plasma treatment:1||protonelectron coupling:1||selfheating effect (SHE):1||3nm technology node:1||Ge:1||neuromorphic computing:1||spiking neurons:1||Oxygen areal density:1||low actuation voltage:1||Radio frequency microelectromechanical system (RF MEMS) switch:1||thermal actuation:1||5Zr(0):1||5O(2):1||offstate stress:1||pMOSFET:1||pdoping:1||3aminopropyltriethoxysilane:1||flexible logic circuit:1||SiGe source/drain:1||interface state:1||metalinduced gap state (MIGS):1||IIIV compound semiconductor:1||metalinduced gap states:1||field effect transistor:1||germanium dioxide:1||interfacial dipole:1||BackEnd of Line:1||Nanoscale BEOL Process:1||OxygenBased Plasma:1||Semiconductor:1||Electronic structure:1||workfunction:1||graphene:1||Ar plasma:1||Germanium n(+)/p:1||Diffusivity:1||Heterojunction:1||Germanium (Ge):1||Asymmetric S/D:1||OTFT:1||infrared detectable phototransistors:1||passivation effects:1||nanosheet FET (NSHFET):1||silicide:1||junctionless fieldeffect transistor (JLFET):1||lineedge roughness (LERs):1||Source/drain contact:1||Schottky barrier height lowering:1||oxide charge trap:1||germanium gate:1||Junctionless FET:1||lowtemperature doping method:1||pulsed green laser:1||Schottky barrier height (SBH):1||Aluminum oxynitride (AlON):1||Nanopores:1||Plasma Ashing Damage:1||Thermal Annealing:1||Ndoping:1||retention time:1||HfO2&:1||solidstate electrolyte:1||thermal resistance:1||oxygen affinity:1||thermal degradation:1||interlayer (IL):1||atomic layer deposition:1||Quality of experience:1||gidlstate stress:1||HCl doping:1||ReSe2:1||wide detection range:1||lineedge roughness (LER):1||thermal stability:1||Epitaxial Growth:1||Sidewall Damage:1||Oxygen Vacancy:1||Ar Plasma:1||typeconverted FET:1||zinc oxide:1||Random dopant fluctuation:1||highkappa:1||GS junction:1||Power device:1||semiconductors:1||ferroelectrics:1||fermi level unpinning:1||Metal induced crystallization:1||optoelectronics:1||electrolytegated fieldeffect transistor:1||TCAD:1||device optimization:1||postmetal annealing:1||spreading resistance:1||Stress:1||turnaround effect:1||hybrid dopant activation technique:1||InGaAs:1||Passivation:1||conductive filament:1||junctionless FET:1||titanium oxide:1||germanium oxide (GeO):1||threshold voltage:1||plasma oxidation:1||Fermi level pinning:1||Electrical properties:1||PPh3:1||postdeposition hydrogen annealing:1||Schottky:1||negative capacitance:1||MOSFET:1||Dopant profile:1||indiumgalliumzincoxide (IGZO):1||Bimodal neural activity:1||time delay:1||Oxygen vacancy:1||random performance variation:1||electrochemical metallization:1||ferroelectric film:1||Logic gates:1||interface trap:1||transitionmetal dichalcogenides (TMDs):1||synapse applications:1||CMOS technology:1||SiliconGermanium:1||Nanoscale:1||Gallium Arsenide:1||photodetectors:1||ALD Al2O3:1||Fermi level depinning:1||steep switching:1||metaloxidesemiconductor fieldeffect transistor (MOSFET):1||Gallium arsenide:1||IGZO:1||Hydrazine:1||Inverter:1||heterojunction:1||Metalpentacene:1||Area dependent:1||effect transistors:1||high detectivity:1||low subthreshold swing:1||dynamic random access memory (DRAM):1||metalinterlayersemiconductor (MIS):1||based ferroelectric field effect transistors:1||based ferroelectric materials:1||Neurotransmitter:1||contact size:1||Resistive random access memory (RRAM):1||Post metal annealing:1||bipolar threshold switches:1||photodetector:1||selective doping:1||opticneural synapse:1||electrochemical metallization (ECM) threshold switch:1||fermilevel pinning:1||aluminumdoped zinc oxide:1||border trap:1||yttrium oxide (Y2O3):1||Tantalum Nitride:1||Zinc Oxide:1||Lowk:1||Amorphous IGZO:1||Photodetector:1||threshold voltage variation:1||Electronic materials:1||SiC:1||Insitu:1||gateinduced drain leakage ( GIDL):1||write time:1||2D materials:1||Neuromodulation:1||Sampling probe:1||3D monolithic integration:1||Technology computeraided design (TCAD):1||source:1||filament confinement:1||Bidirectional actuation:1||electrostatic holding:1||Hf0:1||TiN electrode:1||Degradation:1||MOSFET circuits:1||transistor:1||filament confinement technique:1||volatile switching:1||Complementary metaloxide semiconductor (CMOS):1||MetalInterlayerSemiconductor:1||Fermilevel pinning (FLP):1||lowfrequency noise (LFN):1||germanium oxide:1||metaloxidesemiconductor (MOS) capacitor:1||nickel germanide (NiGe):1||sheet resistance:1||Monolithic ThreeDimensional:1||Silicon:1||Layered compounds:1||variation:1||Fermi level unpinning:1||dichalcogenides:1||ohmic contact:1||Phosphorus:1||atomic threshold switching field&:1||optic&:1||neural synapses:1||Neural probe:1||figure of merit (FoM):1||Nanosheet FET (NSHFET):1||gateall around FET (GAAFET):1||Memristor:1||Nitrogen doping:1||

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