ScholarWorks@Korea University: Kim, Tae geun

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Kim, Tae geun (김태근)

College of Engineering

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Tel 3255
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Resistive switching:16||resistive switching:15||Lightemitting diodes:8||SONOS:7||GaN:6||Biosensor:5||HEMT:5||transparent conductive electrode:5||Transparent conductive electrode:4||Schottky barrier height:4||Photoluminescence:4||neuromorphic computing:4||lightemitting diodes:4||Synaptic learning:4||Numerical simulation:4||Memristive device:4||Reduced graphene oxide:4||crossbar array:4||Crossbar array:4||Ultraviolet:4||ReRAM:4||Indoor organic photovoltaics:3||SWCNT:3||ReCTF:3||Ga2O3:3||Selector device:3||memristor:3||Nonpolar:3||Photolithography:3||Internal quantum efficiency:3||Molecular beam epitaxy:3||thermal stability:3||transmittance:3||silicon nitride:3||Microcavity effect:3||Efficiency droop:3||Ohmic contact:3||Transmittance:3||lightemitting diode:3||Ultraviolet lightemitting diode:3||Multilevel resistive switching:2||Work function:2||Nonvolatile memory:2||Organic lightemitting diodes:2||Density functional theory:2||phonon transport:2||Rapid thermal annealing:2||Saturation mobility:2||microscale lightemitting diodes:2||laser:2||thin film:2||Atomic force microscopy (AFM):2||Fieldplate:2||Timeseries analysis:2||Threshold switching:2||Electrical breakdown process:2||filament:2||transparent conducting electrode:2||PEDOT:PSS:2||LEDs:2||transparent conductive electrodes:2||SAM:2||photonic bandgap materials:2||SANOS:2||confinement materials:2||silver:2||Oxide semiconductor:2||Resistive memory:2||Nickel oxide:2||Conducting filaments:2||Supercapacitor:2||RGO/SWNTs:2||Si3N4:2||bias temperature instability:2||IIIV semiconductors:2||silicon/oxide/nitride/oxide/silicon (SONOS):2||Lightemitting diodes (LEDs):2||Flash memory:2||Solar cells:2||synaptic learning:2||threshold switching:2||Electron blocking layer:2||ZrN:2||hydrogen annealing:2||Leakage current:2||Electric field:2||light extraction efficiency:2||phase change heterostructure memory:2||ultraviolet lightemitting diode:2||pGaN:2||DipCoating Methods:2||SWNT:2||Sputtering:2||Chargetrap Flash (CTF):2||Enzyme:2||FET:2||Gallium nitride (GaN):2||Neuromorphic computing:2||TiO2:2||Alzheimer's disease:2||conducting filament:2||Quantum well and barrier:2||CTF:2||Xray diffraction:2||2DEG:2||memristive effect:2||pulsed electrical breakdown:2||Ultraviolet lightemitting diodes:2||Light emitting diodes:2||ZnO:2||ultraviolet:2||thin films:2||Electrical properties:2||Defects:2||resistive switching (RS):2||Nface:2||ohmic contacts:2||Thermal stability:2||Machine learning:2||cohesive energy:2||transitionmetal dichalcogenide:2||Selfrectifying:2||Transparent conductive electrodes:2||AuCl3:2||Gallium nitride:2||TCO:2||Resistive switching memory:2||MOCVD:2||Breakdown characteristics:2||Ultrathin indium zinc oxide:1||Data storage materials:1||Electrochemical material:1||Sneak path current:1||Mechanical flexibility:1||Perovskite solar cells:1||Aldoped ZnO:1||pH sensing:1||Driving technology:1||Conducting filament:1||Crossplane thermal conductivity:1||Filament doping:1||Ultrathin indium tin oxide:1||Electrical breakdown:1||Organic photovoltaic devices:1||Electrodeposition:1||Building integrated photovoltaics:1||crossplane thermoelectric properties:1||Current spreading:1||Extraction ratio:1||direct Ohmic contact:1||selectivity:1||Alzheimer's diseases:1||widebandgap:1||Hydrogen annealing:1||cosputtering:1||quantum efficiency:1||Deep level defects:1||Photoluminescense:1||Shell thickness:1||ZnO/ZnS:1||soft lithography:1||nonpolar GaN:1||current injection:1||Activation:1||transparent electrodes:1||1D1R:1||semiconductor quantum dots:1||positivebias (PB) temperature instabilities (PBTIs):1||단일벽 탄소나노튜브:1||V defect:1||AlGaN/GaN HEMT:1||InAs:1||Flexible electrode:1||Transparent conductive oxide:1||anti&#8208:1||photoactive materials:1||Sidewall defects:1||Blue thermally activated delayed fluorescence:1||Topemission organic lightemitting diodes:1||MXene:1||Crosstalk:1||Row column array:1||flexible transparent electrodes:1||Tunneling barrier:1||Te multiropes:1||grain size:1||Scallop smoothing:1||Transition metal dichalcogenides:1||artificial neural network:1||Quasitwodimensional electron gas:1||Aragonite:1||Lowpower operation:1||Aqueous battery:1||2D nanomaterial:1||optoelectronic applications:1||Stoichiometrycontrol:1||memristive device:1||Energy harvesting:1||ZnO/Ag/ZnO electrode:1||Droplet epitaxy:1||Metaloxidesemiconductor fieldeffect transistor (MOSFET):1||blocking layer:1||DeepUV:1||Indium gallium tin oxide:1||Surface roughness:1||Singlewalled carbon nanotubes (SWNTs):1||resistive random access memories (RRAM):1||Semiconductors:1||Epitaxial growth:1||Core/shell:1||Crystallization:1||lightemitting devices:1||Nanosphere Lithography (NSL):1||nonvolatile memory (NVM):1||metallic structures:1||Quantum dot laser:1||Crystallinity:1||f_(max):1||quantum barrier(QB):1||universal memory:1||Radical Oxidation:1||Improvement:1||nitridebased semiconductor:1||nonpolar aplane GaN:1||O2 Plasma treatment:1||수직형 LED:1||wide aperture:1||Stresses:1||hydrothermal crystal growth:1||carbon dioxide:1||STDP:1||Inversememristive device:1||Amorphous AgGeTe:1||Bilayer memristor:1||crossbar arrays:1||Deep ultraviolet:1||Memristic effect:1||2D electronics:1||Passivation layer:1||Fluorination:1||Solar cell:1||Viewing angle:1||Indium zinc oxide:1||Mesh electrodes:1||Thermally activated delayed fluorescence:1||Photo sensor:1||Fieldeffect mobility:1||PM6 donor:1||Thermal efficiency:1||cylinderembedded mesh:1||Novel preforming method:1||energy filtering:1||Flexible:1||CuCo2O4 nanosheets:1||chemical solution growth:1||water oxidation catalysis:1||hole injection:1||programmable metallization cell:1||conductive channel:1||Schottky emission:1||cantilever sensor:1||viscous damping:1||Oxygen plasma treatment:1||Memristive computing:1||gallium oxide:1||device simulations:1||conducting filaments:1||charge trapping:1||Activation energy of traps:1||HfOx:1||SCLC:1||SONOS memory:1||Nanosphere lithography:1||Cholesterol:1||Optical biosensing:1||Nanoparticles:1||InAlAs/AlGaAs:1||Reflector:1||Lightemitting diode (LED):1||galliumnitride(GaN):1||resistive random access memory (ReRAM):1||photonic crystals:1||Color rendering indices (CRI):1||passivation effect:1||HEMTs:1||photonic crystal:1||highelectron mobility transistors (HEMTs):1||electricfield distribution:1||DC characteristics:1||산소 플라즈마 처리:1||Europiumsilicate:1||Stoichiometry:1||Gate leakage:1||Metalorganic chemical vapor deposition:1||Double heterostructure:1||AlSb:1||differential gain:1||quantum dot (QD):1||zinc compounds:1||resistive randomaccess memories:1||Electricfieldinduced metal doping treatment:1||timeseries analysis:1||CMOS materials:1||Multiquantum well:1||Efficiency rolloff:1||Low resistance drift coefficient:1||Superlattices:1||Piezoelectric actuator:1||tellurium (Te) nanoropes:1||ultrathin films:1||Crosspoint array:1||Twodimensional electron gas:1||phase change heterostructure:1||Growth interruption time:1||InAlAs:1||Hole injection layer:1||heterostructure:1||Flexible electronics:1||Conductivity:1||Flexibility:1||Energy storage materials:1||Nickel ferrite:1||carbon:1||Resistive random access memory switch:1||Formingfree:1||Phonon scattering:1||Oxygen evolution reaction:1||ZnO/Ag/ZnO:1||Wearable photovoltaic device:1||fill factor:1||layered nickel hydroxide:1||Engineered quantum dot singlephoton source:1||Igzo:1||Oxide metal oxide:1||Wide bandgap:1||UV irradiation:1||Surface plasmons:1||selfrectifying:1||Exosome:1||Strain:1||indiumtinoxide:1||metaldeposition:1||diodelike:1||Transparent Conducting Electrode:1||resistive random access memories:1||NiN Films:1||dangling bonds:1||Gallium oxide (Ga2O3) nanoparticles (NPs):1||solgel method:1||Schottky barrier diodes:1||Quantum barriers:1||Charge trap flash:1||IV:1||space chargelimited conduction (SCLC):1||ZnSe/ZnS:1||Vertical:1||Photocatalyst:1||spacechargelimited conduction (SCLC):1||plasma treatment:1||Ambient:1||aplane ptype GaN:1||Surface morphology:1||Ultraviloet lightemitting diodes:1||DC and RF characteristics:1||white lightemitting diodes (LEDs):1||Charge Trap Flash:1||semiconductor lasers:1||GalliumNitride (GaN):1||전계효과 트랜지스터:1||Bandgap engineering:1||multiple quantum well (MQW):1||DC reactive sputtering:1||InAs quantumdots (QDs):1||Atomic force microscopy:1||Organicinorganic hybrid:1||Photovoltaic property:1||Semiconducting IIIV materials:1||ONO:1||laser diodes (LDs):1||microbolometer:1||infrared:1||ZnOAgZnO Nanomesh:1||Insulatormetal transition:1||Convolutional neural network edge detection:1||selfrectifying resistive switching devices:1||switching mechanisms:1||Perovskite lightemitting diodes:1||indoor organic photovoltaics:1||light emitting diodes:1||Nonradiative recombination:1||Microscale light emitting diodes:1||Ohmic behavior:1||Top emission OLED:1||Charge injection balance:1||Widebandgap buffer layer:1||Low operation voltage:1||Ultralow roughness:1||B3.Quantum cascade lasers:1||Tungsten dioxide (WO 3 ):1||Time series analysis:1||organic lightemitting diodes:1||memristors:1||Ti3C2Tx MXene:1||Photo synapse:1||phase change memory:1||delayedfluorescence:1||Ternary organic solar cells:1||hybrid omnidirectional reflector:1||Charge transport layers:1||Fieldeffect transistors:1||Lightemitting memory:1||Oxygen vacancy:1||Vacancy modulation:1||omnidirectional reflectors:1||electrical bipolar transport:1||Sheet resistance:1||Electrocatalyst:1||Thin film transistor:1||Indiumfree:1||transparent and flexible electrode:1||Distributed Bragg reflector:1||microlightemitting diodes:1||nanocluster intercalation:1||electrical doping treatment:1||Excitonphonon coupling:1||TFT:1||Standard Calibration Sample:1||Quantum capacitance:1||Logic gate:1||Selective Area Growth:1||resistive random access memory:1||BiLayer:1||potential barriers:1||quantum wells:1||silicon:1||Ga2O3:ITO:1||cosputtering:1||UV LED:1||Nitrides:1||Resistive Switching:1||Voltage Distribution:1||FourBitPerCell:1||Charge Pumping Method:1||AlGaInN:1||FET Arrays:1||CV:1||CdSe/ZnS quantum dots:1||Multiple quantumwells (MQW):1||Nanowires:1||Gallium Nitride (GaN):1||AlN:1||Lightemitting diodes(LEDs):1||correlated color temperatures (CCT):1||thin film phosphors:1||Blocking Oxide:1||waveguide discontinuities:1||postannealing:1||Ti/Al/Ti/Ni/Au:1||substrate forward bias:1||Ti / Al:1||Nface ntype GaN:1||singlemode laser diodes (LDs):1||Mesas:1||Highk dielectrics:1||Localized trapped charge:1||Hole trap:1||crystal structure:1||semiconducting IIVI materials:1||MEMS:1||detector:1||NbO2:1||High transparency:1||selector devices:1||sneak path current:1||reflective layer:1||Surface modification:1||Electric field induced doping treatment:1||Cavity suppression:1||Ti 3 C 2 T xTiO 2 nanoflowers:1||Temperature tunability:1||Terahertz (THz):1||thicknessdependent energy levels:1||Vaportransportdeposited tinsulfide:1||Thinfilm transistor:1||Reactiveion etching:1||Interfacial characteristics:1||InGaAs:1||Radiofrequency sputtering:1||Mesh pattern:1||PCE:1||Commercialization:1||Ti3C2 MXene:1||Nidoped ZnO/Ag/ZnO:1||electrode:1||Bromine doping:1||Nanocomposite:1||Microlightemitting diode display:1||Fieldeffect transistor:1||deep ultraviolet:1||nonvolatile memory:1||Phonon transport:1||TANOS:1||Zinc oxide:1||Backside reflector:1||thermal conductivity:1||3omega measurement:1||sneak current:1||MicroLED arrays:1||AlGaN:1||glass electrode:1||electrical breakdown:1||Steep switching devices:1||niobium nitrides:1||stoichiometry:1||Au Nanoparticle:1||NiN film:1||nanopyramid electrode:1||Ultraviolet transparent conductive oxide (UV TCO):1||3D NAND:1||memory:1||PECVD:1||work function difference:1||nanorods:1||TwoStep Pulse Program:1||resistive randomaccess memory (ReRAM):1||interface trap:1||Space charge limited current:1||Thin films:1||NVMs:1||Photoluminescence (PL):1||gallium nitride:1||honeycombtype:1||lightemitting diodes (LEDs):1||Superlattices (SLs):1||solar cells:1||NiAl alloys:1||organic solar cells:1||Separate confinement hetero structure:1||Nanosphere lithography (NSL):1||methods of micro and nanofabrication:1||spacer:1||Metalinsulatorsilicon structure:1||Intrinsic diode:1||metalaluminanitrideoxidesilicon (MANOS):1||negativebias (NB) temperature instabilities (NBTIs):1||DC performance:1||CNT:1||Novel program method:1||ntype GaN:1||transfer length method:1||Vertical LED:1||ANO:1||InGaN/GaN MQWs:1||Growth temperature:1||Aluminum oxide:1||Metal implantation:1||Low sheet resistance:1||Nonvolatile memory:1||emitting diodes:1||parasitic resistance effects:1||Heterostructure:1||Carbonpacked (C@MoSSe):1||Microscale lightemitting diodes:1||Perovskite:1||Electrochemical synthesis:1||Vanadium oxynitride:1||Insulator metal transition material:1||crosstalk:1||resistive memory:1||sensor:1||uniform growth:1||flexible organic solar cells:1||Photo responsivity:1||SF6 plasma:1||Blue thermally activated:1||blue thermally activated delayed fluorescence:1||Perovskites:1||CoSputtering process:1||High selectivity:1||Work function tuning:1||nanocomposite:1||interface engineering:1||Indoor photovoltaics:1||Aluminium oxide:1||Electrochemical doping treatment:1||crossplane Seebeck coefficient:1||3Omega method:1||Interface trap:1||Indoor light conditions:1||ZnO/Ag/ZnO transparent conducting electrode:1||Surface treatment:1||Al2O3/Ag/Al2O3:1||Light extraction efficiency:1||Seebeck coefficient:1||nanoscale conducting filament:1||controlled nanoporosity:1||Electrical breakdown method:1||EGFET:1||Conductive channel:1||Deep ultraviolet lightemitting diodes:1||Photochemical H doping:1||deepUV lightemitting diode:1||biosensor:1||Topological insulator:1||oxygen reservoir:1||Si Doping:1||memristor switch:1||Bilayer:1||ITO:1||transparent conductive oxides:1||Nickel nitride films:1||Charge pumping technique:1||ITOrod:1||Semiconducting IIIIV materials:1||sputtering:1||ZnO Nanorod:1||Memorytrap density:1||Ligand exchange:1||NiN:1||nanosphere lithography:1||vertical light emitting diode:1||AlInGaN:1||Kinetics:1||Glucose:1||Light Emitting Diode (LED):1||transparent resistive random access memory (ReRAM) (TReRAM):1||LED:1||Hole concentration:1||ion etching:1||Plasma treatment:1||f_T:1||europiumsilicate:1||basal stacking faults:1||질소결원:1||Grain growth:1||Avalanche photodiode (APD):1||MIS:1||CdS Nanowires:1||Vaporliquidsolid (VLS):1||Highelectronmobility transistor:1||Buffer leakage:1||linewidth enhancement factor:1||Cobaltite oxide:1||Biomaterial:1||Haze:1||Ti doping:1||Exciton quenching:1||haze:1||optical modulation effects:1||electrical doping process:1||multilevel resistive switching:1||Stable interface:1||Copper oxide:1||P type contact electrode:1||Materials informatics:1||Flexible devices:1||electrochemical synthesis:1||High thermal stability:1||High cycling endurance:1||A3.Molecular beam epitaxy:1||B2.Semiconducting IIIV materials:1||Ferroelectric thin film:1||Surface plasmon resonance (SPR):1||Metal oxide semiconductor:1||Stability:1||oxygen doping:1||Metal oxidebased thin film transistor:1||Highmobility:1||CaCO3:1||Photocatalytic:1||flexible topemission organic lightemitting diodes:1||multilayer electrodes:1||Organic lightemitting diode:1||Reliability:1||selector device:1||resistive switching memory:1||Resistive switching structures:1||Polysilicon channel:1||Grain boundary:1||superlattice films:1||phonon scattering:1||silicon oxide:1||Acetylcholine:1||Acetylcholinesterase inhibitor:1||Strainfree quantum dot:1||MEMS Atomic Force Microscope:1||AlN rod array:1||zince oxide:1||Nanorods:1||Morphology:1||MoO3:1||Resistive random access memories:1||Tungsten oxide:1||Nitrogen doping:1||Crossbar Array:1||IGTO:1||Si doping:1||Doping:1||Sensor:1||MANOS memory:1||Nanocrystals:1||Coneshaped:1||double layer coating:1||Electron blocking layer (EBL):1||Galliumnitride (GaN):1||Epitaxial structure:1||aluminum nitride (AlN):1||reflectance:1||resistivity:1||oxygen plasma:1||holographic interferometry:1||complex nanostructures:1||fabrication and characterization nanoscale materials:1||indium compounds:1||Finitedifference time domain method:1||포토리소그래피:1||multibit SONOS:1||Polarization:1||Sirich:1||Highpower:1||RFsputtering:1||Zirconium nitride (ZrN):1||Dark current:1||4bitpercell:1||NROM (TM):1||Binarytrenchinsulated (BTI) gate:1||Charge trap:1||Synaptic plasticity:1||Trypsin:1||Cosputtering:1||Multilevel memory:1||Hole injection:1||flexible organic light&#8208:1||nanomesh:1||sheet resistance:1||charge transport layers:1||transparent conducting electrodes:1||Synaptic effect:1||Nanospheres:1||amorphous boron nitride (alphaBN):1||Artificial synapse:1||oxygen vacancy:1||passive matrix:1||Color purity:1||ExSitu method:1||Memristor:1||Vertical TFT:1||Au nanoparticles:1||defected TeSOx and TeSeOx structure:1||photosynaptic devices:1||Deep reactiveion etching:1||Silicon micromachining:1||Superlattice:1||Phasechange randomaccess memory:1||Phasechange heterostructure:1||Degradation:1||Technoeconomic analysis:1||

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