ScholarWorks@Korea University: Rieh, Jae Sung

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Rieh, Jae Sung (이재성)

College of Engineering (School of Electrical Engineering)

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Tel 02-3290-3257
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CMOS:8||Imaging:6||imaging:6||receivers:5||substrate noise:4||heterojunction bipolar transistors:4||CMOS integrated circuits:4||oscillators:4||Oscillator:3||Frequency control:3||Frequency Doubler:3||Signal Source:3||noise figure:3||Phase noise:3||Detector:3||injection locked frequency divider:3||terahertz:3||VCO:3||Gateallaround (GAA):3||SiGe HBT:3||Heterojunction bipolar transistors:2||Couplings:2||Heterojunction bipolar transistors (HBTs):2||THz:2||DBand:2||RF resonator:2||signal generators:2||voltagecontrolled oscillators (VCO):2||substrate coupling:2||Oscillators:2||millimeterwave circuits:2||heterojunction bipolar transistors (HBT):2||terahertz amplifier:2||RFCMOS:2||power consumption:2||injection locked oscillators:2||Amplifier:2||voltagecontrolled oscillator (VCO):2||phaselocked loop (PLL):2||Terahertz:2||RF MOSFET:2||phase noise:2||heterojunction bipolar transistors (HBTs):2||terahertz (THz):2||InP HBT:2||PushPush:2||SiGe:2||varactors:2||RF duplexer:2||FBAR:2||BAW:2||GeSi alloys:2||Metals:2||Detectors:2||IIIV semiconductor materials:1||triple push:1||shortrange communication:1||ring oscillator:1||65 nm CMOS:1||Layout:1||IIIV semiconductors:1||1 GHz:1||InP:1||wideband:1||PhaseLocked Loop (PLL):1||Wireless memory:1||mmwave integrated circuit:1||millimeterwave amplifier:1||fivestage Dband amplifier:1||2 mW:1||gain 12:1||layout:1||MOS Varactor:1||RF CMOS:1||frequency division:1||thermal noise:1||90˚ Hybrid Coupler:1||submillimeter wave:1||Realtime systems:1||Microwave imaging:1||Voltagecontrolled oscillators:1||Transmission imaging:1||LC CrossCoupled:1||heterojunction bipolar transistor harmonic oscillator:1||5 GHz to 645:1||parasitic base inductance:1||heterjunction bipolar transistor (HBT):1||silicon germanium:1||fundamental mixer:1||Bulk acoustic wave:1||Qfactors:1||18 mum:1||Gain:1||Q factor:1||voltage controlled oscillator (VCO):1||Bandwidth Enhancement:1||series resistance:1||printed circuit board (PCB):1||quality factor:1||systemonchip:1||Detector array:1||ONOFFkeying (OOK) modulator:1||65nm CMOS:1||second harmonic signal:1||pushpush operation:1||signal source:1||frequency 561:1||power 49:1||semiconductor materials:1||terahertz wave devices:1||RFID:1||seriespeaking line:1||bipolar integrated circuit:1||commonbase:1||heterodyne receiver:1||900 MHz:1||Receiver:1||film bulk acoustic wave resonator:1||mixers:1||f(max):1||interface trap charge:1||subthreshold degradation:1||injectionlocking:1||Ring Oscillator:1||varactor:1||Wideband Mixer:1||singleacceptor atom:1||temperature dependence:1||Qfactor:1||thermal resistance:1||thermal design:1||coupled line:1||Changing the resonance frequency:1||Ntimes power method:1||harmonic oscillators:1||bias variation:1||silicon germanium HBT technology:1||amplifier peak gain:1||power combining:1||Colpitts:1||Streaming:1||Internet of Things:1||Cascode:1||heterodyne transmitter:1||Digital Data Slicer:1||size 0:1||silicon nanowire fieldeffect transistor (SNWFET):1||inductive feedback:1||guard ring:1||Frequency Divider:1||Digital substrate noise:1||nanowire:1||ferromagnetic spiral inductor:1||Computed tomography (CT):1||Indium phosphide:1||ring oscillators:1||switches:1||Yfactor method:1||commonbase crosscoupled topology:1||3 mW:1||VoltageControlled Oscillator (VCO):1||amplifier instability:1||shunt transistor pair:1||submillimeter wave integrated circuits.:1||Wireless communication:1||CMOS distributed amplifier:1||common emitter:1||CMOS integrated circuit:1||multiplying circuits:1||Bipolar integrated circuit:1||triplepush:1||Bulk acoustic wave (BAW) resonator:1||RF MOSFETs:1||smallsignal model:1||frequency divider:1||locking range:1||mobilitydegradation factor:1||silicon:1||device scaling:1||power amplifier (PA):1||inductance:1||Power generation:1||Harmonic analysis:1||sensor arrays:1||harmonic generation:1||submillimeter wave:1||CMOS technology:1||Noise:1||terahertz imaging:1||passive shunt transistor pair:1||transistor pair amplification:1||terahertz (THz) monolithic integrated circuit:1||RFID Tag:1||Voltage controlled oscillator:1||inductive positive feedback:1||HBT technology:1||inductive positive feedback technique:1||2 dB:1||Semiconductor device modeling:1||f(T):1||Millimeter wave:1||low noise amplifier:1||Bandwidth enhancement:1||Cryogenic temperatures:1||silicongermanium (SiGe):1||magnetostatics:1||ferromagnetic materials:1||Ring oscillators:1||Logic gates:1||semiconductor detectors:1||coupled lines:1||millimeter wave:1||frequency synthesizer:1||Lownoise amplifier:1||Signal Generation:1||millimetre wave oscillators:1||differential amplifiers:1||submillimetre wave amplifiers:1||differential amplifier:1||DC power dissipation:1||Infraless communication:1||oscillator:1||mixer:1||millimetre wave amplifiers:1||power 67:1||RF filter:1||Semiconductor device noise:1||Frequency divider:1||90 degrees hybrid coupler:1||LNA:1||InjectionLocked Frequency Divider:1||Substrate coupling:1||Guard ring:1||Inductors:1||magnetic films:1||frequency detection:1||transformers:1||Electrical engineering:1||Mixers:1||quadrature voltagecontrolled oscillator (QVCO):1||voltagecontrolled oscillator:1||complementary metaloxidesemiconductor (CMOS):1||singlepole singlethrow (SPST):1||tomography:1||indium compounds:1||wide band gap semiconductors:1||threestage differential cascade topology:1||base bias voltage tuning:1||frequency 260 GHz:1||gain 15 dB:1||power 112 mW:1||voltagecontrolled oscillators (VCOs):1||mderived section:1||heterodyne bipolar transistors:1||stacked:1||Dband:1||Fundamental local oscillator:1||Wideband:1||frequency 135 GHz:1||temperature coefficient of frequency (TCF):1||stability:1||Differential feed:1||gate resistance:1||LC oscillator:1||monolithic microwave integrated circuit (MMIC):1||mmwave(MMW):1||wideband mixer:1||PhaseLocked Loop:1||noise figure (NF):1||millimeterwave:1||silicon nanowire FET (SNWFET):1||heterojunction bipolar transistor (HBT):1||Millimeterwave:1||radio frequency (RF):1||signal reconstruction:1||Impedance:1||Subharmonic injectionlocked oscillators:1||

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