ScholarWorks@Korea University: Kim, Gyu Tae

Detailed Information

Kim, Gyu Tae (김규태)

College of Engineering

Research Area

Tel 02-3290-3780
Homepage

ResearcherID ORCiD Scopus Google Scholar ID ResearchGate

Keyword

Junctionless transistors (JLTs):8||nanowires:7||Flatband voltage (Vfb):5||rhenium disulfide:5||MoS2:4||graphene:4||carrier transport:4||lowfrequency noise:4||2D numerical simulation:4||UTBB:3||nanoelectronics:3||field effect transistor:3||Nanowire:3||noise:3||fieldeffect transistors:3||electrical conductivity:3||Threshold voltage (Vth):3||Schottky barrier:3||time domain analysis:3||passivation:3||fieldeffect transistor:3||Optical fiber sensors:3||Junctionless transistor:2||nanofabrication:2||WSe2:2||Contact resistance:2||Vacancy:2||Blue Phosphorescent Organic LightEmitting Diode:2||Extraction method:2||contact resistance:2||Hexagonal boron nitride:2||stimulated Brillouin scattering:2||Wood:2||multilayer:2||degradation:2||Graphene:2||semiconductor materials:2||interlayer tunneling barrier:2||field effect transistors:2||FDSOI:2||carbon nanotubes:2||Carbon nanotube:2||Thin film transistor:2||SOI (silicon on insulator):2||Low frequency noise:2||chemical doping:2||ZnO:2||ReS2:2||Series resistance:2||Fieldeffect transistor:2||Channel width variation:2||Raman scattering:2||numerical simulation:2||Effective mobility:2||2D materials:2||Series resistance (Rsd):2||Carrier mobility:2||photodetector:2||Highk/metal gate stack:2||Seebeck coefficient:2||molybdenum disulfide:2||OLEDs:2||Degradation:2||semiconductor quantum wires:2||low frequency noise:2||Separation:1||Stimulated brillouin scattering:1||analytical equations:1||AlGaN/GaN HEMTs:1||Lowfrequency noise and carrier number fluctuation model:1||2D transitionmetal dichalcogenides (TMDs):1||MonteCarlo method:1||Numerical simulation and temperature dependence:1||Black phosphorus:1||scandiastabilized zirconia:1||silver:1||Thermal Stress:1||Ambient Exposure:1||Spin coating:1||interface trap density:1||Interfacecoupling measurement:1||quaternary alloy:1||epitaxy:1||Magnetoresistance (MR):1||Magneto transport:1||Split CV:1||Transfer length:1||Specific contact resistivity:1||Microcontact printing:1||Capacitance:1||Effective width (Weff):1||Sidewall accumulation current (Id_side):1||Galvanostatic Deposition:1||Organic Superconductor:1||junction:1||simulation:1||ZnO nanorods:1||Proteins:1||2D structures:1||sneak path problem:1||Low temperature measurement:1||activation energy:1||nanoneedle transistorbased sensor:1||heterojunctions:1||photoluminescence:1||nanotube:1||GeSi alloys:1||NO2 sensor:1||SolGel Growth Method:1||nanosensors:1||chemical vapour deposition:1||circuit:1||printing:1||soft lithography:1||Contact Resistance:1||field&#8208:1||Opensource microcontroller:1||Bending sensor:1||Ca2+:1||twodimensional materials:1||interlayer resistance:1||neuromorphic:1||Brillouin optical correlation domain analysis (BOCDA):1||mixeddimensional heterostructure:1||bandtoband tunneling:1||temperature dependency:1||reaction mechanism:1||ionic liquid gating:1||Channel:1||series resistance:1||Network:1||Doping effects:1||transfer:1||Degradation pattern:1||cathode:1||Crystallization:1||Schottky barrier height:1||Subthreshold slope:1||noise equivalent power:1||Low temperature characterization:1||Electronics transport:1||chalcogenide:1||black phosphorus:1||Electrostatic coupling:1||aInHfZnO:1||Field effect transistors:1||Low field transport:1||Back bias effect:1||bandgap:1||SWCNT network:1||Mass transport:1||chemical treatment:1||Raman spectroscopy:1||TMTSF:1||AAO:1||InZnO:1||thin film transistors:1||phototransistors:1||Transparent flexible photosensor:1||SOCl2:1||Diagnostic assay:1||Rheumatoid arthritis:1||titanium dioxide:1||microstructures:1||distortion:1||hole mobility:1||hole traps:1||semiconductor device noise:1||C2H5OH sensor:1||edge effects:1||shaping gate channels:1||selfassembly:1||ZnO nanorod:1||gate ReS2:1||hot carrier injection:1||MWCNTcoated cotton yarn:1||Realtime data storage in cloud system:1||Neurons:1||STDP:1||bias temperature instabilities:1||Raman amplification:1||Brillouin scattering:1||optical fiber sensors:1||Absorption:1||Mathematical model:1||DFTassisted TCAD simulations:1||single pulse chargepumping:1||trap:1||Rhenium disulfide:1||charge trap:1||Scattering:1||Stimulated emission:1||Frequency modulation:1||backgate biasing:1||oncurrent to offcurrent ratio:1||Nursing homes:1||transport map:1||transition metal dichalcogenide:1||Bulk channel:1||reconfigurable memory:1||crystalbond:1||ideality factor:1||Subthreshold conduction:1||Gadoliniadoped ceria:1||selfcatalyzed GaAsSb nanowires:1||trench:1||corrugation:1||band gap bowing:1||water repellent:1||phosphorene:1||Transmission line method:1||Contact area:1||flatband voltage:1||Electrical parameter extraction:1||Drain induced barrier lowering (DIBL):1||Channel doping level:1||Amperometric enzyme biosensor:1||Lowfrequency (LF) noise:1||Scattering mechanisms:1||Implantation induced defects:1||InGaZnO:1||remote incell touch:1||thermalassisted pulsed laser deposition:1||photocurrent:1||doping:1||resistance switching:1||pn type conversion:1||Lowfrequency noise:1||electric heating:1||thermal resistance:1||ZnO Nanorods:1||elemental semiconductors:1||ultraviolet detectors:1||disorder:1||Nanowire Device:1||Activation Energy:1||defects:1||Deep learning:1||Automatic successive measurements:1||Force sensor:1||Memristors:1||SPICE:1||diffusive memristor:1||inkjet printing:1||conducting path transition:1||MoTe2/MoS2 heterostructure:1||Probes:1||drain induced barrier increasing:1||Aged:1||Nursing:1||Schottky barrier transistor:1||Si thickness (t(si)):1||surface accumulation channel:1||maximum depletion width:1||partially depleted (PD):1||Singlewalled carbon nanotube:1||tungsten diselenide:1||chemical doping light harvesting:1||QLEDs Quantum dots:1||Deembedded Rsd effects:1||OrganicOrganic Interdiffusion:1||DIBL:1||Nondestructive testing:1||band gap modulation:1||Nitrogenplasma:1||Tindioxide:1||InGaZnO:1||junctionless transistors:1||lowfield mobility:1||Back bias:1||Nanowire array electrode:1||Junctionless Transistors (JLTs):1||fewlayer graphene:1||substrate structures:1||crossbar architecture:1||nanowire:1||Fluo4AM dye:1||SnO2 nanowire:1||surface roughness:1||analytic model:1||retargeting:1||Micro Heater:1||photoconductivity:1||Atomic force microscopy:1||4,4 'N,N 'dicarbazolebiphenyl (CBP):1||voltage division:1||Synapses:1||surface charge transfer doping:1||electron transfers:1||charge trap synapse:1||Stimulated Brillouin scattering (SBS):1||Adsorption:1||Evaporation:1||Organic solvent:1||doping, fieldeffect transistor:1||In2O3 quantum dot:1||slow photoresponse:1||High electric fields:1||Channel length effect:1||Filtration:1||multilayer MoS2:1||ionicliquid:1||Qualitative research:1||graphical analysis:1||Thermal conductivity:1||Sheet resistance:1||Mobility degradation factors:1||CNFCMF model:1||Schottky junction:1||Lightemitting diodes:1||poly(4vinylpyridine) (PVPy):1||Threshold voltage:1||solid oxide fuel cells:1||nanostructures:1||Junctionless transistors (JLT):1||Yttriastabilized zirconia:1||Hooges noise parameter:1||Neutral defects:1||UTBB FDSOI:1||IIVI chemical compound semiconductor:1||nanowire transistor:1||outofequilibrium transport:1||Amorphous oxide:1||threshold voltage:1||Aunanoparticle:1||Directcurrent characteristics:1||Low field mobility (mu(0)):1||Bulk channel mobility:1||Dielectrics:1||Electrical properties:1||Trap density (Nt):1||Effective width:1||amorphous oxide semiconductors:1||Sensors:1||brushshaped heteronanostructures:1||carbon nanotube network:1||ptype:1||MOSFET:1||ZnOSnO2:1||OPC:1||drive current:1||semiconductor doping:1||silicon:1||materials preparation:1||surface states:1||Sensor matrix:1||hump:1||SPICE simulation:1||multilayers:1||surface doping:1||alphamolybdenum trioxide:1||Encapsulation:1||Channel surface stability:1||Baking:1||InGaAs:1||Distributed fiber optic sensor:1||ReS2 phototransistor:1||channel length effect:1||Ebeam irradiation:1||in situmeasurement:1||Si nanowire:1||Optical fiber sensor:1||WSe2 fieldeffect transistor:1||Cobalt oxide:1||charge conduction mechanism:1||Coulomb screening:1||Accumulation channel:1||highk encapsulation layer (Al2O3):1||Etching:1||Catalytic oxidation:1||Analytical modeling:1||Schottky nanocontact:1||conductive AFM:1||Organic lightemitting diodes:1||nanobelts:1||nanosheets:1||empirical pseudopotential method:1||ultrathin body and BOX (UTBB):1||neutral defects scattering:1||Poly(3hexylthiophene):1||Trigate MOSFET:1||Numerical simulation:1||Electrical resistivity:1||periodic nanomodulation:1||Geometry:1||Surface area:1||NEXAFS spectroscopy:1||singlewalled carbon nanotubes:1||Fluorescence:1||FinFET:1||Schottky contact:1||asymmetric contact:1||luminescence:1||thermal conductivity:1||Gas sensors:1||leakage current:1||electrical contacts:1||electrodes:1||nanopatterning:1||Noise:1||Scanning gate microscopy:1||effect transistors:1||hexagonal boron nitride:1||Compact modeling:1||Lifetime assessment:1||interface traps:1||Shape:1||tunneling fieldeffect transistors:1||hot carrier:1||Density functional theory:1||Nitrogen oxide:1||localcontrolgate transistors:1||interface trap:1||mica:1||Two dimensional materials:1||ambipolar transistors:1||channel length scaling:1||Optical fiber amplifiers:1||multilayer materials:1||4,4 'N,N 'dicarbazolebiphenyl (CBP) bis(2phenylquinoline) iridium(III) (acetylacetonate) (Ir(pq)2(acac)):1||Interdisciplinary studies:1||Pit:1||bulk neutral channel:1||On/off ratio:1||reconfigurable field effect transistors:1||Less effective barrier height:1||Diffusion current:1||pulsed laser deposition:1||chemical vapor deposition:1||single crystals:1||saturation velocity:1||Organic junction transistor:1||LangmuirSchaefer technique:1||Maserjian'slike function for g(m):1||Percolation:1||SWCNT:1||polymer composite:1||Nanowire array stack electrode:1||Bulk conduction:1||Carrier number fluctuations:1||Sidewall gate effect:1||Effective mobility (mu(eff)):1||SnO2 nanowires:1||percolation:1||liquid exfoliation:1||Surface separation:1||diodes:1||junctions:1||carbon nanotube:1||realtime sensor:1||intracellular calcium ion:1||junctionless multigate transistors:1||temperature measurement:1||Coreshell nanowires:1||Semiconducting Gas Sensor:1||magnetoelectronics:1||tin compounds:1||pattern formation:1||Chemical Sensor:1||Multiwalled carbon nanotube (MWCNT):1||cyclic thermal aging:1||transition metal dichalcogenides:1||Immune system:1||Biological system modeling:1||drift memristor:1||PMMA:1||Quantum dot:1||currentvoltage contour map:1||effective Schottky barrier height:1||Doping:1||Anisotropy:1||Fin crosssection shape:1||Channel doping concentration:1||Catalytic etching:1||Oxidation:1||anisotropy transport:1||method for parameter extraction:1||bulk channel mobility:1||thermoelectrics:1||intrinsic silicon nanowires:1||nonvolatile transistors:1||photovoltaic:1||Interlayer:1||Transition metal oxide:1||Bulk neutral conduction:1||intermediate temperature:1||OrganicOrganic Interface:1||Solid oxide fuel cells:1||System identification:1||Cu domains:1||selfassembled monolayer:1||stability:1||reliability:1||mobility:1||saturation regime:1||Al2O3:1||SOI:1||MOS:1||Flatband voltage:1||Carbon nanotubes:1||Silicon:1||2D numerical simulation:1||superstructure:1||Doping concentration (Nd):1||SWCNTs network:1||Nanocrystalline materials:1||SWCNTs:1||Sensitivity:1||electrical properties:1||nanodevices:1||Surface roughness scattering:1||equivalent circuit:1||electrochemical impedance spectroscopy (EIS):1||NADH:1||doping profiles:1||Permalloy:1||dual&#8208:1||oxide defect:1||carrier mobility:1||metal contacts:1||Internet of Things (IoT):1||delay systems:1||fiber optics:1||transitionmetal dichalcogenides:1||

RSS_1.0 RSS_2.0 ATOM_1.0

145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Detailed Information

Keyword

BROWSE