ScholarWorks@Korea University: Park, Jeung Hee

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Park, Jeung Hee (박정희)

Graduate School (Department of Advanced Materials Chemistry)

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Tel 041-860-1336
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hydrogen evolution reaction:12||firstprinciples calculation:6||spinpolarized density functional theory:5||phase transition:5||firstprinciples calculations:4||nanowires:4||composition tuning:3||MoSe2:3||photoluminescence:3||transition metal dichalcogenide:3||water splitting:3||ZnO:2||lithium ion batteries:2||nanosheets:2||chemical vapor transport:2||PbS nanowires:2||transition metal dichalcogenides:2||Nanocrystals:2||hydrogen evolution:2||phase evolution:2||phase conversion:2||band gap:2||photoelectrochemical cell:2||photoconductivity:2||ReSe2:2||superlattice:2||polymorphism:2||photoelectrochemical cells:2||Lithium ion battery:2||silicon nanowires:2||Nanomaterial:1||MoS2:1||tungsten disulfide:1||Ndoped graphite:1||Membrane filtration:1||germanium:1||phase change:1||charge selectivity:1||NdYAG pulsed laser:1||anisotropic:1||spinplarized density unctional theory:1||ternary alloys:1||atomic immiscibility:1||WNbSe2:1||in situ XAFS:1||enriched Se:1||pn junction:1||defect reactions:1||Schottky barrier height:1||Photoluminescence:1||photocurrents:1||zinc phosphide:1||pseudobinary:1||lithiumintercalated polymorphs:1||Transfer:1||PDMS:1||Metal substrate:1||GeRGO hybrids:1||vacancy and adatom defects:1||SiAs:1||charge transfer:1||WSe2VSe2 alloy:1||atomic mixing:1||ReS2VS2 alloys:1||transition metal doping:1||Dirac semimetal:1||3D Dirac semimetal:1||Ru nanoparticles:1||nickel selenide:1||bending strain:1||polytypic structures:1||Zinc oxide nanowires:1||ideality factor:1||nanocrystals:1||GeTe center dot Bi2Te3:1||CuO nanowires:1||GaPZnSenanowires:1||GeSbTe:1||Graphene:1||polarized Raman microscopy:1||CdS QDs:1||Polystyrene:1||spinplarized density functional theory:1||(2):1||Se enrichment:1||Cd3As2:1||nanowire:1||Dichalcogenide:1||Tungsten sulfide:1||lithium ion battery:1||Ta3N5:1||atomic layer deposition:1||transparent conducting oxide:1||NiSe2:1||bifunctional:1||atomic layer deposition (ALM CO2 photoreduction:1||wertzite:1||cubic phase:1||superlattices:1||coercive values:1||Gasphase photolysis:1||ZnO nanowires:1||core shell nanocables:1||twinned nanowires:1||Zn3P2 nanowires:1||controlled growth direction:1||solvothermal:1||gasphase substitution:1||field effect transistors:1||layered structure:1||atomic distribution:1||WSe2 nanosheets:1||in situ Xray absorption fine structure:1||body centered tetragonal phase:1||Transition Metal:1||Water Splitting:1||Hydrogen Evolution:1||orthorhombic phase:1||boron:1||Faraday efficiency:1||nanostructures:1||zinc arsenide:1||quaternary composition tuning:1||tin nanocrystals:1||lithium intercalation energy:1||Fieldeffect transistor (FET):1||cubicrhombohedral transition:1||NbSe2:1||vacancies:1||(Mo,V)Se2 alloy:1||NbVSe2 alloy:1||polytypes:1||adatoms:1||quantum dot:1||Photoelectrochemical Cells:1||cobalt doping:1||Schottky nanocontact:1||conductive AFM:1||Si nanowire:1||GaSe:1||Perovskite:1||anion exchange reaction:1||photodetectors:1||tetragonal phase:1||tetragonal structures:1||silver nanoparticles:1||electron transfer:1||InAs nanowires:1||FePt Nanoparticles:1||Rigid Nanoparticle Support:1||binary alloy:1||2M phase:1||Cadmium arsenide:1||ZnSe and CdSe nanowires:1||Silver nanowires:1||Electrochemical detection:1||Differential pulse voltammetry:1||tantalum doped ZnO:1||Photocurrents:1||GaS:1||Phasechange materials:1||ternary alloy:1||zinc blende phase evolution:1||surfaceenhanced Raman scattering:1||Ndoped graphitic layers:1||first principles calculations:1||new hematite superstructures:1||Germanium:1||Hybrid structures:1||Tidecoration:1||chemical vapor deposition:1||resolved polarized Raman spectrum:1||photodetector:1||(MoVNb)Se:1||intercalation:1||(MoWV)Se2 ternary alloy:1||alloys:1||primitive tetragonal phase:1||Tungsten oxide:1||Gas phase sulfurization:1||molecular dynamics simulations:1||DFT calculations:1||CoSe2:1||monolayers:1||electrical conductivity:1||timeresolved transient absorption spectroscopy:1||Solvent controlled synthesis:1||Ptype conducting:1||bismuth oxide:1||CdSSe:1||Electron tomography:1||angle&#8208:1||

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