ScholarWorks@Korea University: Kim, Sang sig

Detailed Information

Kim, Sang sig (김상식)

College of Engineering (School of Electrical Engineering)

Research Area

Tel 02-3290-3245
Homepage

ResearcherID ORCiD Scopus Google Scholar ID ResearchGate

Keyword

ZnO:17||positive feedback loop:12||Nanoparticles:10||Nanoparticle:9||silicon nanowire:9||Nanowire:8||silicon nanowires:8||Thermoelectric:7||subthreshold swing:7||Memory:7||TCAD simulation:7||nanowires:6||fieldeffect transistor:6||Nanowires:6||ReRAM:6||Semiconductors:5||MOSFET:5||zinc compounds:5||IIVI semiconductors:5||HgSe:4||wide band gap semiconductors:4||SiInZnO:4||FET:4||Thermoelectric generator:4||plastic substrate:4||nanoparticles:4||nanowire:4||Thin film transistor:4||bendable substrate:4||Plastic Substrate:4||Zinc oxide:4||feedback fieldeffect transistors:4||thin film transistor:4||graphene:4||Thin film:3||semiconductor quantum wires:3||aIGZO TFT:3||Flexible:3||Flexible electronics:3||topdown approach:3||Amorphous oxide semiconductor:3||Si nanowires:3||Si:3||Feedback fieldeffect transistors:3||threshold voltage:3||fieldeffect transistors:3||inverter:3||Photocurrent:3||nanoparticle:3||silicon:3||thermoelectric:3||nonvolatile memory:3||Ring oscillator:3||flexible:3||FieldEffect Transistor:3||Fieldeffect transistor:3||Thin films:3||memory:3||Oxide:3||SPICE model:3||feedback loop:3||Al2O3:3||Nanofiber:3||Silicon Nanowire:2||Nanocrystals:2||Silicon:2||GaN:2||Photoluminescence(PL):2||Silicon zinc tin oxide:2||integration:2||Flexible Device:2||ZnOxS1x:2||Nanowires (NWs):2||Compact model:2||Si Nanowire:2||Gadoped ZnO:2||HWPLD:2||Optoelectrical characteristic:2||semiconductor thin films:2||thin film transistors:2||static random access memory (SRAM):2||atomic force microscopy:2||Resistive switching:2||Biosensor:2||Zinc oxide nanoparticle:2||Density of states:2||thermoelectric module:2||Resistive Switching Memory:2||nanocrystals:2||Unipolar:2||drainsource current:2||pn Heterojunction:2||Low temperature:2||Pulsed laser deposition:2||Annealing:2||Feedback fieldeffect transistors (FBFETs):2||memory application:2||Sintering:2||Pt:2||photoconductivity:2||Hysteresis:2||Photoresponse:2||mixedmode simulation:2||bending stress:2||Ag2Se:2||Seebeck:2||highk:2||bendable electronics:2||Thinfilm transistor:2||Gas sensor:2||logicinmemory:2||NOR logic gate:2||Solgel:2||feedback mechanism:2||power generation:2||Thinfilm transistors:2||interface trap distribution:2||Heterojunction:2||Inverter:2||Thin film transistors:2||Neutrontransmutationdoping(NTD):2||nonvolatile memory:2||ZnO Nanowire:2||Cell transistor:2||memory hierarchy:2||#8208:2||feedback fieldeffect transistor:2||Oxides:2||plastic:2||tunneling:2||Solution Process:2||Plastic sensor:2||tunnel FET logic gate:1||Thermoelectric voltage:1||Voltage drop:1||positive gate bias stress:1||aITGZO channel material:1||illumination:1||Random access memory:1||one transistor:1||Black phosphorus:1||Field effect transistor:1||bandtoband tunneling:1||Flexible supercapacitors:1||ratioed inverter:1||Stiffness modulation:1||silicon nanowire (SiNW):1||photothermal:1||nanocrystal thin films:1||Bendability:1||Dual functionality:1||power factor:1||semiconductor:1||hybrid gate dielectric:1||Island Structure:1||DC Reactive Magnetron Sputtering:1||heat transfer:1||Plastic substrate:1||Subthreshold swing (SS):1||Oxide thin film transistors:1||Solution process:1||Couple:1||Barrier height:1||Ga and Agdoped ZnO:1||ZnO nanoparticle:1||MoS2:1||ring oscillator:1||Ternary Compound:1||organic compounds:1||floating body effect:1||memristive system:1||Lightemitting diodes (LEDs):1||Multilevel:1||Poly(3,4ethylenedioxythiophene): poly(styrenesulfonate):1||pn junctions:1||Half wave rectification:1||Charge detrapping:1||Highk gate stack:1||Excimer laser annealing:1||Embedded capacitor:1||nanowire (NW):1||recessedchannel array transistor (RCAT):1||TiN:1||Quantum confinement:1||silver:1||silicon compounds:1||Platinum:1||Electronic transport:1||Flexible device:1||Optoelectrical properties:1||Photodetectors:1||FET memory integrated circuits:1||nanotechnology:1||Response:1||Field Effect Transistor:1||nanoelectronics:1||Nanostructures:1||Waveguide:1||polyaniline:1||AgCu:1||silver sulfide:1||spiking neural networks:1||field&:1||pn modules:1||Hafnium oxide:1||Positive gatebias stress:1||simulation:1||Photovoltaic cell:1||colorless polyimide:1||PBS:1||amorphous indiumtingalliumzincoxide thinfilm transistors:1||bandgap:1||Doublegate:1||positivefeedback loop:1||separate gate:1||Contact printing:1||Lithographyfree:1||Bending strain:1||Micro supercapacitors:1||Buffer stage:1||capacitorless:1||Transient simulation:1||Sense amplifier:1||Infrared absorption:1||solutionprocessable:1||flexible thermoelectric:1||Transparent Thermoelectric:1||aIGZO:1||piezophototronics:1||silicon nanowire array:1||Metal capping:1||DC magnetron sputtering:1||Dual function:1||metallic filament:1||Chalcogen nanoparticle:1||Glass fiber:1||Oxidizable Electrode:1||Binary selfassembled monolayer:1||Cyclic voltammetry:1||Hotwalled pulsed laser deposition:1||Oxide Trap Charge:1||ZnOxS1x:Mn:1||(GAAMOSFET):1||MetalOxide Semiconductors:1||Photovoltaic effect:1||phototransistors:1||Xray photoelectron spectroscopy:1||chalcogenide:1||Flexible memories:1||Flexible Optoelectronics:1||Morphology Transformation:1||Phasetransition:1||Enzymefree:1||Gadoped zinc oxide:1||Zinc cadmium oxide:1||metalsemiconductor fieldeffect transistors (MESFET):1||Leakage current:1||Aluminum nanoparticles:1||HfO₂ thin film:1||Optoelectrical:1||electron emission:1||numerical analysis:1||Combined Microscope:1||MIS capacitors:1||conductivity:1||electrospirming:1||광전류:1||neuromorphic computing:1||recovery:1||latchup mechanism:1||Negative gatebias stress:1||current matching:1||voltage0:1||33 V:1||Lowfrequency noise:1||Logic circuit:1||Transmission line method:1||poly(3hexylthiophene):1||Ag2Te:1||Nanoparticle thin film:1||photocurrent:1||Flexible thermoelectrics:1||Chargeplasma effect:1||Impact ionization:1||bendable TFT:1||negativeAND (NAND) logic gates:1||nanowatt operation:1||ThinFilm Transistor:1||SnO2:1||Transparent Electrode:1||Bending curvature radius:1||Siliconnanowire:1||Bonding state:1||Gate coverage:1||Composite materials:1||pn module:1||interconnect:1||SPICE:1||NWs:1||Avalanche gain:1||Avalanche photodetectors (APDs):1||Intrinsic region:1||Cholesterol:1||Oxide Thin Film Transistors:1||Top Electrode:1||Unipolar Switching:1||Bipolar Switching:1||Coplanar Waveguide:1||SiliconNanowire Array:1||NOTLogic Circuit:1||HgTe:1||Logic:1||Amorphous silicondoped indiumzincoxide (aSIZO):1||graphene transistor:1||transition metal dichalcogenide:1||siliconnanowire (SiNW) array:1||Zinc Oxysulfide:1||Mercury Sulfide:1||Simulation model:1||flexible electronics:1||Sputtering:1||Bipolar:1||TaOx:1||Nanoribbon FET:1||Strontium bismuth tantalum oxide (SET):1||Chalcogenides:1||electric field effects:1||Naowires:1||Transparent device:1||UV/ozone treatment:1||arrays:1||doping:1||Memory Device:1||Au:1||elemental semiconductors:1||hydrophilicity:1||polymer substrate:1||나노입자:1||optical heating:1||inkjet:1||Complementary metaloxidesemiconductor:1||oscillation:1||thin film thermoelectric generators:1||Amorphous indiumtingalliumzincoxide:1||Thermal annealing:1||device modeling:1||Latchup mechanism:1||Memory characteristics:1||spiking neural networks (SNNs):1||silver selenide nanoparticles:1||Computational modeling:1||feedback fieldeffect transistors (FBFETs):1||reconfigurable transistor:1||transient simulation:1||covered sourcechannel TFET:1||Film density:1||onetransistor dynamic random access memory (1TDRAM):1||Random dopant fluctuation:1||Impedance field method:1||Threshold voltage variability:1||Ion implantation:1||Thermoelectrics:1||Tunneling:1||Metal Capping:1||channel width:1||Ecoflex Substrate:1||lowpower functionality:1||finite difference time domain:1||HfO2:1||Lowpower:1||Electron microscopy:1||plastics:1||lowpressure chemical vapor deposition:1||VIZO:1||Ethanol gas sensor:1||Hole blocking layer:1||Doping effect:1||pType Si nanowires:1||Infrared image:1||scaling theory:1||Electronic circuits:1||Flexible substrate:1||solution process:1||Logic Circuit:1||Heat Generation:1||indiumzincoxide (IZO):1||Chemical deposition from solution:1||memristive switches:1||IIVI semiconductor:1||Doped GeO2:1||GaDoped ZnO:1||D0 X Peak:1||GaDoped:1||partially depleted (PD):1||silicon nanowire transistor (SNWT):1||1TDRAM:1||Array:1||Conductivity:1||PEOurea complex:1||Dielectrophoresis (DEP):1||PVA:1||ion implantation:1||Gatecontrolled diode:1||Aluminum:1||Electron mobility:1||Transparent heater:1||Hybrid:1||field effect transistors:1||oxidation:1||Spincoating:1||HgSe nanocrystals:1||NO2:1||Highk:1||semiconductors:1||technology computeraided design simulation:1||integrateandfire neuron:1||quasi&:1||Micro super capacitor:1||hysteresis characteristic:1||electrostatic doping:1||Hafnium aluminum oxide:1||Copper selenide:1||amorphous indium tin gallium zinc oxide:1||donorlike Gaussian states:1||synapse device:1||Thermoelectric charging:1||trench gate:1||Reduced graphene oxide:1||Carbon nanotube:1||nmetal oxide semiconductor (MOS) inverter:1||Stretchable substrate:1||sputtering method:1||Silver telluride:1||fieldeffect:1||inhibition effect:1||trapassisted electroluminescence:1||Non linearity:1||Energy storage and conversion:1||multilayers:1||coplanar waveguide:1||Electroluminescence:1||Electron transport layer:1||Heat transfer:1||PseudoMOSFET:1||Al Nanoparticle:1||Resistive Switching:1||Interconnect:1||TopDown Approach:1||Hg Se:1||Flexible Substrates:1||oxidemetaloxide (OMO):1||Threshold voltage:1||flexible devices:1||Excimer laser:1||logic gate:1||Fieldeffect transistor (FET):1||GZO:1||Composite film:1||Single walled carbon nanotube:1||Printed TFT:1||Diodes:1||Charge pumping:1||BST:1||GaAs:1||Dualfloating gate memory:1||Zno:1||Variation of the current level:1||MINI capacitor:1||Indium tin oxide:1||carrier density:1||FET logic devices:1||coatings:1||ohmic contacts:1||pn heterojunctions:1||Quantum Dot:1||gold:1||aluminum oxide:1||Mechanical pressing:1||CPI substrates:1||tunnel FET:1||Hybrid energy device:1||Design method:1||integrateandfire (IF) neuron:1||compressive stress:1||Environmental thermal energy:1||Solar heat absorption material:1||interface layer:1||amorphous semiconductors:1||thinfilm transistors:1||acceptorlike conduction bandtail states:1||voltage 183:1||0 mV:1||InSnGaZnO:1||Logic gates:1||transposable memory:1||volatile memory:1||photodetectors:1||Flexible display:1||Tunnel FET:1||Device modeling:1||Bistable resistor (biristor):1||work function:1||Mechanical strain:1||Oxide Semiconductor:1||Thin Film Transistors:1||bendable supercapacitor:1||Flexible Electronics:1||Thin Film:1||thermal conductivity:1||betalactoglobulin amyloid fibril:1||thioflavin T fluorescence assay:1||Tunneling field effect transistor (TFET):1||sub60 mV/dec:1||Electrospinning:1||substrates:1||PEDOT:PSS 5,10,15,20tetrakis(4pyridyl)21H 23Hporphyrin:1||Organic lightemitting diodes:1||gateallaround metaloxidesemiconductorfieldeffecttransistor (GAAMOSFET):1||Interface Trap Charge:1||Radio Frequency:1||oxide thin film transistor:1||Thin Film Transistor:1||Electrospun fibers:1||barrier height:1||variable range hopping:1||HBantTHT:1||Pt Nanoparticle:1||Inkjet printer:1||Si nanowire:1||Systemonpackage:1||CMOS compatibility:1||CMOS inverter:1||charge pumping (CP):1||interface traps:1||Nonvolatile memory:1||Defroster:1||Polymer:1||dark conductivity:1||polymer insulators:1||mercury telluride:1||Memories:1||HfO₂:1||stochastic neuron:1||effect transistors:1||repetitive mechanical stress:1||MXene thin films:1||thin film:1||bendable oxide thinfilm transistors:1||bending radius:1||hybrid energy device:1||gallium compounds:1||conduction bands:1||tin compounds:1||aITGZO TFT:1||Transistors:1||Electric potential:1||Feedback loop:1||Feedback fieldeffect transistor (FBFET):1||Micro supercapacitor:1||Tunnel fieldeffect transistors:1||switchablememory:1||Calibration:1||positive feedback:1||Gateallaround:1||CuO:1||amorphous carbon:1||Seebeck coefficient:1||Dopingless:1||strain:1||aSi:H TFT:1||nanocomposite:1||SiliconNanowire:1||Split channel:1||finite element method:1||Nitrogendoped amorphous carbon:1||Sub60 mV/dec:1||Composites:1||Electronic materials:1||platinum:1||modeling:1||Threshold Voltage:1||Serotonin:1||Floating Gate Memory:1||Nickel Silicide:1||gateallaround metaloxidesemiconductorfieldeffecttransistor:1||SiO:1||Complementary:1||Luminescence:1||iongel dielectric:1||PCBM:1||Ambipolar transistor:1||Organic thin film transistor:1||Photoresponse electrical characteristics:1||Laser annealing:1||Si nanowire (NW):1||Transparent conducting oxide:1||electronic circuit:1||CO Gas Sensor:1||Stacking Faults:1||Glucose:1||RCAT:1||2bit operation:1||Pn heterojunction:1||Flexible devices:1||transition metal oxides:1||Fieldeffect transistors (FETs):1||Amorphous:1||optical sensor:1||pulsed laser deposition:1||Nonagglomerated necking:1||Charge Trapping:1||electron traps:1||Titanium:1||mercury compounds:1||Germanium:1||switchable memory device:1||leaky integrateandfire neuron:1||aITGZO TFTs:1||2D materials:1||thermal conductivities:1||latchup voltage:1||current gain:1||channel length variation:1||tensile stress:1||Interdigitated micro supercapacitor:1||photovoltaic:1||indium compounds:1||electrical characteristics:1||Doping:1||Nitrogen doping:1||Seebeck effect:1||Deposition pressure:1||Thermoelectric modules:1||Bendable thermoelectric:1||Highscan rate:1||pMOS inverter:1||Fieldeffecttransistor:1||solar thermal energy:1||hysteresis:1||thermoelectric modules:1||steep switching characteristics:1||Lascorbic acid:1||piezoelectronics:1||Tunnel Barrier:1||subk(B)T/q switch:1||impact ionization:1||Nanofibers:1||flexible substrates:1||carbon nanotube (CNT):1||Electrochemical impedance spectroscopy:1||Plastic:1||SiZnSnO:1||HgSe Nanoparticle:1||Doubly Stacked Memory:1||Vertical Integration:1||Nanomaterials:1||MEHPPV:1||nanocrystal (NC):1||nonvolatile:1||TFET:1||complementary inverter:1||Capacitorless:1||Integration:1||Sputter:1||R2R gravure printer:1||Agdoped ZnO:1||LightEmitting Diode:1||Trap profile:1||Dielectrophoresis:1||resistive switching:1||pn heterojunction photodiode:1||Optical properties:1||doping profiles:1||Logic circuits:1||Co gas:1||memories:1||ZnO nanoparticles:1||cadmium compounds:1||nanofabrication:1||static induction transistors:1||Nanofabrications:1||polycrystalline silicon:1||logic:1||Ag:1||electrical properties:1||Nanotechnology:1||pnpn diode:1||latchup phenomenon:1||absence of external bias lines:1||Allinone energy system:1||Dual side:1||reliability:1||bias stress:1||reconfigurable fieldeffect transistors:1||polarity control:1||temperaturedependent:1||

STATISTICS: Total View :6,940,465; Today View :6,533

RSS_1.0 RSS_2.0 ATOM_1.0

145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Detailed Information

Keyword

BROWSE