ScholarWorks@Korea University: Jeon, Sang geun

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Jeon, Sang geun (전상근)

College of Engineering

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Tel 02-3290-4828
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CMOS:8||Bandwidth:5||power amplifier:4||Impedance:4||Transistors:4||voltagecontrolled oscillator (VCO):3||Power generation:3||Topology:3||Frequency doubler:2||terahertz:2||coupled line:2||impedance matching:2||Transmission line measurements:2||lownoise amplifier:2||GaAs:2||frequency divider:2||Wireless communication:2||Harmonic analysis:2||WR3:2||RFIC:2||medium power amplifier:2||mmwave frequency band:2||millimeterwave:2||Insertion loss:2||high efficiency:2||4 band:2||Layout:2||power divider:2||wideband:2||InP DHBT:2||InP double heterojunction bipolar transistor (DHBT):2||transformer:2||Attenuators:1||distributed attenuator:1||transmitter:1||phase shifter:1||gallium arsenide:1||IIIV semiconductors:1||field effect transistor switches:1||size 70 nm:1||frequency 59:1||0 GHz:1||Switches:1||variable Tline (VTL):1||IIIV semiconductor materials:1||terahertz (THz) monolithic integrated circuits:1||tunable neutralization:1||Lumped Elements:1||transceiver:1||OOK communication:1||flexible substrate:1||microsupercapacitor arrays:1||mmwave integrated circuit:1||millimeterwave amplifier:1||frequency division:1||LTE antenna:1||antenna feed:1||Bit error rate:1||integrated circuit:1||Circuit faults:1||wideband flat gain:1||Capacitance:1||group delay:1||InP double heterodyne bipolar transistor (DHBT):1||Qband receiver:1||image rejection:1||Radio frequency:1||Switching circuits:1||Imaging:1||Power transmission lines:1||65nm bulk CMOS:1||Bandpass filter:1||Injectionlocked frequency octupler (ILFO):1||pushpush oscillator:1||SiGe heterojunction bipolar transistor (HBT):1||wireless charging:1||InP HBT:1||Wilkinson coupler:1||fundamental mixer:1||scaled active switches:1||Wilkinson:1||gallium nitride (GaN):1||Wband:1||backoff efficiency:1||Kaband:1||traveling wave:1||Semiconductor device measurement:1||wideband submillimeterwave source:1||f(MAX):1||Gain:1||Dband receiver:1||millimeter wave (mmwave):1||receiver:1||millimetre wave field effect transistors:1||0 GHz to 77:1||mmwave singlepole singlethrow mHEMT switch:1||multipleband operation:1||singlepole Nthrow(SPNT) switch:1||InP heterojunctionbipolar transistor (HBT) technology:1||distributed structure:1||millimeterwave (mmwave):1||Capacitive degeneration:1||seriespeaking line:1||heterodyne receiver:1||Beam forming:1||ClassE Power Amplifier:1||multiantenna systems:1||GaN HEMT:1||RF:1||phase noise:1||injectionlocking:1||power dividers:1||dummy metal fills:1||cavity antenna:1||Frequency modulation:1||THz transceivers:1||Asymmetric PA:1||VectorSum Phase Shifter (VSPS):1||CMOS amplifier:1||Equivalent circuits:1||onchip bias network:1||reflectiontype phase shifter (RTPS):1||subterahertz:1||layout design:1||High Linearity Input Matching:1||Varistors:1||CMOS varistors:1||multifunction:1||parasitic inductance:1||insertion loss:1||differential quasicascode pair:1||transformerbased impedance matching:1||lowcost bulk CMOS:1||GaAs pHEMT:1||Asymmetric coplanar strip (ACPS):1||bioenvironmental sensors:1||heterodyne transmitter:1||DualBand:1||balun:1||spiral structure:1||triplewell:1||DVBS.2.:1||truetime delay (TTD):1||microwave:1||phasedarray receiver:1||microwave components:1||substrate noise:1||Modulation:1||5G mobile communication:1||zero dc power:1||5G:1||inductive neutralization technique:1||Inductance:1||wideband amplifier:1||Couplers:1||Frequency tripler:1||Cooptimization:1||poweradded efficiency:1||Lowpower electronics:1||subharmonic mixing:1||low power:1||2LOtoRF isolation:1||Resistive Feedback:1||Linearity:1||stackedFET structure:1||Indium phosphide:1||frequency doublers:1||MOSvaractor:1||OOK:1||wireless communication:1||GBand:1||Dband amplifiers:1||CMOS distributed amplifier:1||dBlinear:1||injection locked oscillators:1||RFCMOS:1||locking range:1||Transceivers:1||THz communications:1||CMOS millimeterwave:1||MMIC:1||Distributed amplifier (DAs):1||modified artificial transmission line (MATL):1||Power system harmonics:1||phased array:1||mmwave:1||MOSFET:1||optimum output admittance:1||Receivers:1||multistate cell:1||microwave switches:1||high electron mobility transistors:1||GaAs mHEMT process:1||Microwave theory and techniques:1||Heterojunction bipolar transistors:1||WR15 band:1||broadband source:1||cascode crosscoupled pair:1||Butler Matrix:1||Crossover Coupler:1||transistor modeling:1||Harmonic Matching:1||stretchable electronics:1||full Xband:1||terahertz (THz) monolithic integrated circuit:1||vectorsum phase shifter (VSPS):1||ultrawideband (UWB):1||CMOS integrated circuits:1||low noise amplifier:1||noise figure:1||signaltonoise ratio:1||dielectric resonator:1||high power:1||microwave monolithic integrated circuits:1||Distributed mixer:1||WR1.0 band:1||Dband amplifier:1||Logic gates:1||CMOS technology:1||triplewell nFET:1||attenuator:1||series capacitor:1||SPST switch:1||shunt switching cell:1||Stability analysis:1||multiplication factor:1||Wband frequency:1||CMOS Wband amplifier:1||Planar Circuits:1||Frequency Doubler:1||positive feedback:1||ratrace coupler:1||wideband harmonic matching:1||Frequency control:1||voltagecontrolled oscillators (VCO):1||gain control:1||efficiency:1||oscillator:1||multilayer substrate:1||Substrate coupling:1||Gband:1||Power amplifiers:1||Phased Array:1||frequency staggering technique:1||Cutoff frequency:1||variablegain amplifier:1||Frequency conversion:1||highpower terahertz source:1||downconversion mixer:1||Eband:1||output matching network:1||LNA:1||Attenuation:1||digital attenuator:1||serialtoparallel converter:1||highpower applications:1||singlepole singlethrow switch:1||Highpower source:1||terahertz source:1||wide frequency tuning range:1||Dband:1||envelope detector:1||full Dband:1||gain boosting:1||interstage matching:1||polyimide:1||bodyattachable device:1||mderived section:1||classE amplifier:1||submillimeterwave:1||Fundamental local oscillator:1||lossy matching:1||single Gilbertcell structure:1||WR3 band:1||heterojunction bipolar transistors (HBT):1||Distributed amplifier (DA):1||heterojunction bipolar transistor (HBT):1||indium phosphide (InP):1||monolithic microwave integrated circuit (MMIC):1||MultiHarmonic Matching Network:1||variable gain amplifier (VGA):1||impedance transformer:1||transmission line:1||mmwave(MMW):1||Coupled lines:1||digital CMOS process:1||Wilkinson divider:1||diversity antenna:1||Wireless personal area networks:1||onoff keying:1||multimode:1||MillimeterWave (mmwave):1||Phase shifters:1||gate resistance:1||subterahertz:1||voltagecontrolled oscillator:1||Wideband:1||

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