ScholarWorks@Korea University: LIM, Sang Ho

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LIM, Sang Ho (임상호)

College of Engineering (Department of Materials Science and Engineering)

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Tel 02-3290-3285
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Magnetic properties:5||Perovskite manganites:3||Magnetocaloric effect:3||perpendicular magnetic anisotropy:3||Magnetic phase transformation:2||Nanostructured cells:2||Sputtering:2||Nanostructured Cell:2||Exchangecoupled trilayers:2||D):2||magnetic random access memory:2||Magnetic random access memory:2||sputtering:2||Plasma immersion ion implantation and deposition (PIII&:2||magnetic properties:2||Synthetic Ferrimagnets:2||induction cooker:2||Ar pressure:2||Magnetostatic fields:2||Perpendicular magnetic anisotropy:2||Magnetization dynamics:2||Nanostructured magnetic cells:2||Adhesion:1||Magnetic anisotropy:1||hardness test:1||Sputtered thin films:1||Orthogonal fluxgate sensor:1||interfacial anisotropy:1||thickness effects:1||Interlayer Magnetostatic Coupling:1||Facecentered cubic thin films:1||CurrentInduced Magnetization Switching:1||Single magnetic layer:1||magnetic thin film:1||iron alloys:1||Schottkytunnelbarrier:1||Synthetic antiferromagnet:1||Ferromagnetic resonance:1||photoluminescence:1||dynamics of magnetization switching:1||exchangecoupled trilayers:1||Magnetic films and multilayers:1||[Pt/Co] multilayers:1||Polyether ether ketone (PEEK):1||Interlayer coupling field:1||Epitaxial thin films:1||Crystallographic orientation:1||AlSiN:1||Magnetocaloric effects:1||magnetic materials:1||Spin electronics:1||Micromagnetic simulation:1||Artificial joints:1||Synthetic ferrimagnet:1||nanostructured cells:1||magnetic configuration:1||silicon on insulator:1||buried oxide:1||Photoluminescence:1||Porosity:1||Magnetic property:1||Surface diffusion:1||Spin glass:1||Magnetic phase transition:1||Si spintronics:1||NdFeB sintered magnet:1||Diffusion mechanism:1||optical properties:1||anisotropy coupling:1||PtCo multilayers:1||Buffer layer:1||Nanostructured magnetic thin film:1||Closepacked plane:1||Temperature Increase:1||cobalt alloys:1||Exchangecoupled trilayer:1||phosphor:1||Low saturation magnetization:1||[Pt/(Co, Cu)] multilayers:1||Magnetoresistance:1||Amorphous phase:1||Bioactivity:1||Magnetic parameters:1||Magnetoresistance sensitivity:1||Xray diffraction:1||CoNbZr thin film:1||Magnetism in solids:1||Perpendicular magnetization:1||CoFe/Pd multilayer:1||Seed Layer Effects:1||analytical equation for the total energy:1||polymer composites:1||coercive force:1||sandwich structures:1||gallate:1||PSII:1||Hydrothermal synthesis:1||Yttrium vanadates:1||Cobalt:1||Magnetic frustration:1||Magnetic thin films and multilayers:1||Magnetic measurements:1||Nanoporous thin films:1||Giant magnetoresistance sensor:1||Dealloying:1||Microstructure:1||mixed anisotropies:1||information storage:1||Nitrogen ion implantation:1||Magnetocrystalline anisotropy:1||CoFeB/Pd Multilayers:1||Substrate Effects:1||Surface Anisotropy:1||thin films:1||Defects:1||Thermal stability:1||magnetic field sputtering:1||synthetic ferrimagnets:1||magnetic thin films:1||Critical fields:1||Spin injection efficiency:1||Free poles:1||PDP:1||micromagnetic simulation:1||Ta/NiFeB/MgO:1||Porous material:1||Thin films:1||Oxygen plasma:1||ErCo alloys:1||CoFePdB thin film:1||Thermal Stability:1||Total hip replacement:1||Hysteresis loops:1||Analytical calculation:1||Magnetic Random Access Memory:1||Magnetization Reversal:1||ferromagnetic materials:1||thermal insulation:1||magnetic anisotropy:1||thermal properties:1||magnesium compounds:1||Spin injection:1||Magnetostatic coupling:1||Oxide formation:1||Transition metals:1||Crystal growth:1||Radiofrequency magnetron sputtering:1||polycarbonate glazaing:1||patterned magnetic cells:1||Lateral dimensions:1||magnetic damping:1||Critical Switching Field:1||Synthetic Ferrimagnet:1||Pinondisk wear test:1||Inter layer Exchange Coupling:1||Finite Element Method:1||Switching Window:1||spintronics:1||aerogel sheet:1||finite element method:1||annealing:1||Finite element method calculation:1||Thermodynamic prediction:1||MgO barrier:1||CoFeB electrode:1||perpendicular magnetic anisotropy (PMA):1||Pt/Co/AlN trilayers:1||Domain structure:1||Oxygen plasma ashing:1||FeZr alloy:1||Fe/MgO/Si(100) system:1||Grain boundary diffusion process:1||Coercivity:1||magnetocaloric effects:1||Pt/Co/Pt trilayers:1||Magnetic Energy Barrier:1||Switching phase diagram:1||Niobium nitride (NbN):1||Nanostructured Cells:1||Inter layer Dipole Fields:1||Magnetic Tunnel Junctions:1||Perpendicular Magnetic Anisotropy:1||Magnetoelastic Coupling:1||domain:1||Switching properties:1||magnetic energy barrier:1||electrical properties:1||boron alloys:1||magnetic tunnelling:1||palladium:1||Magnetic energy barrier:1||Applied magnetic field dependence:1||Interface resistance:1||Oxides in magnetic tunnel junctions:1||SPIMOX:1||Structure elucidation:1||Template effect:1||Magnetic thin films:1||

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