ScholarWorks@Korea University: LEE, Jae Woo

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LEE, Jae Woo (이재우)

Graduate School (Department of Electronics and Information Engineering)

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Tel 044-860-1421
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lowfrequency noise:4||Surface roughness scattering:2||nanowires:2||percolation network:2||defects:2||Threshold voltage:2||MOSFET:2||V2O5:2||FinFET:2||Fieldeffect transistor:2||Effective mobility:2||hysterisis:2||2D materials:2||Contact resistance:2||polyvinyl alcohol (PVA):2||timedependent defect spectroscopy (TDDS):1||low frequency noise:1||GAA NWFET:1||Black phosphorus:1||negative capacitance FinFET:1||Low temperature measurement:1||contact resistance:1||GeSi alloys:1||nanoelectronics:1||nanosensors:1||field&#8208:1||MoS2:1||activation energy:1||Activation energy:1||Access resistance:1||thinfilm transistor:1||trap analysis:1||selfassembled monolayers (SAMs):1||interdigitated horizontal electrode (IHE):1||Degradation pattern:1||graphene:1||field effect transistor:1||distortion:1||hole mobility:1||hole traps:1||semiconductor device noise:1||noise:1||gate ReS2:1||TDS:1||effective mobility:1||highpressure deuterium annealing:1||dip coating:1||trench:1||corrugation:1||Lowfrequency noise:1||degradation:1||electric heating:1||thermal resistance:1||semiconductor materials:1||elemental semiconductors:1||Photolithography:1||energy band diagram:1||Hexagonal WS2 monolayer:1||aIGZO TFT:1||NEAA:1||decision tree:1||thresholdvoltage extraction:1||defect:1||SnO2 nanowire:1||carbon nanotubes:1||surface roughness:1||Doping effect:1||retention:1||ESR:1||GaN/Si:1||HEMT:1||surface energy:1||Steep switching:1||semiconductor doping:1||silicon:1||electron beam:1||electronhole pairs:1||Low frequency noise:1||LFN:1||Fluorophore:1||Parameter extraction:1||gateallaround fieldeffect transistor (GAA FET):1||interface traps:1||low temperature polycrystalline silicon:1||barrier height:1||multilevel random telegraph noise:1||Temperature dependence:1||S/D extension length (Lext):1||thermal conductivity:1||effect transistors:1||hexagonal boron nitride:1||interface trap:1||Heterogeneous defect domains:1||knearest neighbors:1||machine learning:1||nanoscale spacing:1||Carrier mobility:1||ferroelectric capacitor:1||Surface separation:1||junctionless multigate transistors:1||temperature measurement:1||fieldeffect transistor:1||Bilayer photoresist:1||3D NAND flash memory:1||Isothermal amplification:1||NEAR:1||omegagate nanowire field effect transistor:1||semiconductor quantum wires:1||doping profiles:1||electrical conductivity:1||dual&#8208:1||hydrogen posttreatment annealing:1||oxygen vacancy:1||Stabilizer:1||Mobility:1||

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