ScholarWorks@Korea University: Hong, Mun Pyo

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Hong, Mun Pyo (홍문표)

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Tel 044-860-1321
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OLED:3||OTFT:3||Neutral beam:3||Etch rate:2||Amorphous carbon film:2||Sputtering:2||Room Temperature:2||Reflector:2||Etch mechanism:2||Low temperature deposition:2||phaseseparated composite organic film:2||display:2||Reactive particle beam:2||Bias voltage:2||Copper:2||Indium tin oxide:2||ICP CVD:2||Molybdenum:2||ferroelectric liquid crystal:2||Silicon Nitride:2||Plasma damage:2||NBaCVD:2||Wet etch:2||Nanocrystalline silicon:2||Optical band gap:2||liquid crystal:2||IBOLED:2||polymerstabilized vertical alignment mode:1||Flexible OLED:1||transparent conductive oxide:1||room temperature process:1||FMBA:1||Diamondlike carbon:1||Boron:1||Films:1||Spectroscopy:1||Superimposed rf/dc magnetron sputtering:1||Silicon nitride:1||Contact resistance:1||Plasma modeling:1||Raman:1||Phosphoric acid:1||Chemical bonding nature:1||Damage free sputtering:1||Inductively coupled plasma (ICP):1||plasma damage:1||pixel isolation:1||retardation:1||Gas barrier:1||magnetic field shielded sputtering:1||nanocrystal embedded amorphous phase:1||Inner Two Parallel Cylindrical ICPCVD:1||Low hydrogen ratio:1||Roughness:1||Adhesion force:1||Soluble OSC:1||Localized hydroxyl group:1||Nanocrystalline silicon:1||Crystallinity:1||longterm stability:1||Raman spectroscopy:1||DC magnetron sputtering:1||etch rate:1||BCl3/O2 plasma:1||EIL:1||ITO multilayer:1||TEOLED:1||stress:1||Nano crystal silicon:1||electrostatic force:1||Acetic acid:1||Room temperature:1||fast moving ball:1||ICP source:1||Particle beam:1||LCMO:1||VO2:1||etch mechanism:1||Dissociation kinetics:1||process induced damage:1||Liq:1||SmC*:1||onestep dry etch:1||WVTR:1||gas barrier:1||Vacuum seasoning:1||Functional applications:1||Copper metallization:1||HfO2:1||Hysteresis:1||Vertical transfer:1||Top emission:1||IV:1||FTIR:1||TiO2:1||Microbolometer:1||compensation film:1||plasma induced damage:1||hyperthermal neutral beam:1||H2:1||birefringence:1||Encapsulation:1||image sticking:1||threshold voltage:1||Resistivity:1||Electrical properties:1||Galvanic reaction:1||OLED backplane:1||TFT:1||Nanocrystalline:1||TFT manufacturing:1||HIL:1||Lowtemperature:1||Thin film transistor:1||LBMO:1||TCR:1||Heat conservation:1||ZrO2:1||picell:1||polymerization:1||tiltedbookshelf:1||Aluminum oxide:1||RC matching:1||mobile ion:1||PSVA:1||indium tin oxide:1||Two Inner Parallel Cylindrical Coil ICPCVD:1||IGZO:1||Oxygen doping:1||Termination capacitor:1||Flexible display:1||Polymeric gate insulator:1||Alternative poly (4vinyl phenol) (PVP):1||LSMO:1||Mesoporous oxide:1||PEDOT:1||poly(ionic liquid):1||Reactive Particle Beam assisted sputtering system:1||Cl2/Ar plasma:1||Xray scattering:1||ECRRIE:1||Oxygen control:1||Ammonia:1||Plasma treatment:1||Passivation film:1||Neutral particle beam assisted sputtering system:1||Organic thin film transistor:1||Phenolic resin:1||wet etching:1||Inverted structure:1||Neutral beam assisted deposition:1||Nano crystalline:1||Molybdenum thin film:1||CMR:1||holeinjection layer:1||organic light emitting diodes:1||Ellipsometry:1||polymer wall:1||flexible display:1||polymernetwork:1||bend state:1||layer buckling:1||HCl gas:1||ITO:1||Plastic:1||CVD:1||epaper:1||Silicon:1||Soluble organic semiconductor:1||Poly (4vinyl phenol):1||Silicon dioxide:1||Low temperature aIGZO TFTs:1||Neutral particle beam:1||Electronicpaper:1||Tungsten oxide:1||OES:1||Amorphous silicon:1||Internal strain:1||Resistance:1||optically compensated bend:1||Ag:1||

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