ScholarWorks@Korea University: Wang, Gun uk

Detailed Information

Wang, Gun uk (왕건욱)

Research Area

Tel 02-3290-4612
Homepage

ResearcherID ORCiD Scopus Google Scholar ID ResearchGate

Keyword

memristors:4||neuromorphic computing:4||artificial synapses:3||2D materials:3||barristor:3||graphene:3||molecular heterojunction:2||Neuromorphic computing:2||artificial neurons:2||neuromorphic electronics:2||Crossbar array:2||silicon oxide:2||tantalum oxide:2||molecular electronics:2||quantum dots:2||memristor:2||resistive memory:2||artificial neural networks:1||memristive electronic devices:1||dopamine:1||photonic artificial synapse:1||freestanding transistor:1||ultrathin artificial synapse:1||copper nanoplates:1||graphene doping:1||transition voltage spectroscopy:1||Energyefficient:1||suspended gate with superparamagnetic cluster:1||solidstate devices:1||artificial neural network:1||molecularscale selector:1||metal–semiconductor fieldeffect transistors:1||Organic ferroelectric material:1||artificial tactile learning electronicskin:1||organolead halide perovskite:1||electronic inks:1||metaloxide:1||ultralow power consumption:1||resistive change memory:1||transfer:1||platform:1||Nanoporous:1||Gatetunable memristor:1||extrasensory synapse:1||&nbsp:1||analog bipolar switching:1||unipolar threshold switching:1||van der Waals heterojunctions:1||Channel conductance:1||Ferroelectric HZO:1||Cs(1x)FA(x)PbBr(3):1||MoS<sub>2</sub>:1||Convolution neural network:1||ferroelectric artificial synapses:1||ferroelectricgate fieldeffect transistor sensing memory:1||heterostructure:1||intermolecular van der Waals interaction:1||conductive fillers:1||lowtemperaturegrown KNbO3:1||nanocrystal:1||single nanopore structure:1||nonlinear switching:1||thermionic emission:1||PooleFrenkel conduction:1||One transistorone resistor architecture:1||Triphenylene:1||Graphene barristor:1||perovskite nanocones:1||RRAM:1||magnetoreceptive artificial synapse:1||memtransistors:1||Rebound depolarization:1||synapticcoupling:1||Barristor:1||MoTe<sub>2</sub>:1||tactile sensory synapses:1||organic ferroelectric memory:1||artificial synapse:1||neuromorphic application:1||Molecular junction:1||ReRAM:1||Switching conductive filament:1||Organic resistive memory:1||Electrostatic gating:1||Nonvolatile universal logic gates:1||neural network:1||artificially intelligent compass:1||moleculeinorganic heterostructures:1||Hybrid stack layers:1||continuity:1||Synaptic barristor:1||selfrectifying:1||2D semiconductors:1||logic application:1||halide perovskite:1||charge trapping/detrapping transport:1||organic fieldeffect transistor:1||inverter:1||organic synaptic devices:1||conformable transistor:1||ferroelectric synapse:1||SiOx:1||organic composites:1||Organic nonvolatile memory transistor:1||Charge trap layer:1||Threeterminal memristor:1||online learning:1||silicon:1||hardware implementation:1||uniformity:1||moleculeorganic heterostructures:1||Thiol ene click chemistry:1||crossbar array:1||Organic artificial synapse:1||organic artificial synapse:1||transition voltage:1||electrodes:1||organic disk:1||pentacene:1||memory:1||Nonvolatile memory:1||Small molecule:1||nonvolatile memory:1||layered double hydroxide&#8208:1||transparent memory:1||nanorods:1||probabilistic neural networks:1||artificial retina:1||stochastic computing:1||ferroelectricgate fieldeffect transistor:1||digital bipolar switching:1||synaptic functions:1||charge transport mechanism:1||threeterminal molecular heterojunction:1||traffic control vectormatrix multiplications:1||molecular tilt configuration:1||FAPbI(3):1||fieldeffecttransistor memory:1||switchable functions:1||copper nanowires:1||dimension control:1||nanogenerator:1||selfpowered:1||interface engineering:1||charge transport:1||space charge limited current:1||organic craters:1||densitytunable perovskite nanocrystals:1||photonic synapses:1||selfassembled photoreceptors:1||probabilistic synapse:1||NiO x memristor:1||molecule2D material heterostructures:1||transition metal dichalcogenides:1||signal decisions:1||Fermilevel pinning:1||fieldeffect transistor:1||reversible polarity control:1||mixed ionicelectronic conduction transport:1||wearable neuromorphic electronic devices:1||bisFBN3:1||moleculartilt configuration:1||selfassembled monolayer:1||benzenedithiol (BDT):1||coherent transport model:1||breakdown process:1||succinonitrile:1||organic transistors:1||Seamless GCNT hybrid:1||patterning:1||selective growth:1||Ta2O5x:1||based nanocomposites:1||unipolar switching memory:1||Silicon oxide (SiOx):1||selfnavigating compass:1||dropconnected network:1||molecular selfassembled monolayers:1||Neuromorphic transistors:1||Dynamic range:1||Artificial synapse:1||lowpower electronics:1||

RSS_1.0 RSS_2.0 ATOM_1.0

145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Detailed Information

Keyword

BROWSE