ScholarWorks@Korea University: LEE, Sang Hoon

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LEE, Sang Hoon (이상훈)

College of Science (Department of Physics)

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Tel 02-3290-3107
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magnetic anisotropy:9||Planar Hall effect:9||Magnetic anisotropy:8||Molecular beam epitaxy:7||Characterization:6||Ferromagnetic semiconductor:6||Anisotropy:5||Hall effect:5||Ferromagnetism:5||Semiconductor:4||Ferromagnetic semiconductors:4||Magnetic materials:3||magnetic semiconductors:3||free energy:2||Multilayer:2||gallium compounds:2||Gallium compounds:2||Ferromagnetic (FM) films:2||ferromagnetic materials:2||GaMnAs:2||Semiconducting IIIV materials:2||ferromagnetic semiconductors:2||IIVI semiconductors:2||planar Hall effect (PHE):2||IIIV semiconductors:2||gallium arsenide:2||Polarization:2||magnetic domains:2||ferromagnetic semiconductor:1||Anomalous hall effect:1||Semiconducting IIIV materials (Ferromagnetic semiconductors, Giant magnetoresistance, Noncollinear alignments, Planar Hall effect, Magnetic memory):1||spinorbitinduced (SOI) field:1||Spin orbit induced field:1||Planar Hall Effect:1||Semiconducting IIIVI materials:1||photoluminescence:1||semiconductor quantum dots:1||time resolved spectra:1||wetting:1||iron:1||Ferromagnetic semiconductros:1||Selfassembled quantum dot:1||Activation energy:1||semiconductor:1||CdSe quantum dot:1||MuMax3:1||spinorbit torque (SOT):1||spin polarization:1||interlayer coupling:1||Crystalline ferromagnetic films:1||planar Hall effect (PHR):1||magnetic tunnel junction (MTJ):1||tunneling anisotropic magnetoresistance (TAMR):1||magnetic multilayers:1||semiconductor thin films:1||level splitting:1||Photoluminescence:1||anisotropy:1||planar:1||magnetization switching:1||topological insulator:1||Superlattices:1||Dilute magnetic semiconductors:1||magnetoresistance (MR):1||Memory Device:1||Low dimensional structures:1||zinc compounds:1||optical properties:1||resonance:1||trilayer:1||epitaxial growth dynamics:1||Ferromagnetic semiconductors (FMSs):1||spinorbittorque (SOT):1||Ferromagnetic semiconductor (FMS):1||spinorbit interactions:1||Planar hall effect:1||interlayer exchange coupling (IEC):1||proximity effects:1||Interlayer exchange coupling (IEC):1||Magnetoresistance:1||Ferromagnetic Fe Film:1||MultiDomain:1||magnetisation:1||metallic thin films:1||Xray resonant magnetic reflectivity:1||Pinning field:1||Interlayer exchange coupling:1||magnetic thin films:1||manganese compounds:1||Magnetic semiconductor:1||magnetic switching:1||micromagnetic simulation:1||Dresselhaus effect:1||spinorbit torque:1||spin texture:1||Tensile strain:1||planar Hall effects:1||Interlayer exchange coupling:1||Planar Hall resistance:1||Anisotropic tunneling magnetoresistance (ATMR):1||magnetic susceptibility:1||Super lattice:1||semiconductor alloys with graded composition:1||bulk inversion asymmetry:1||Exchange bias (EB) effect:1||thin film:1||crystal:1||Semiconducting IIIV materials (GaMnAsP ferromagnetic semiconductors:1||planar Hall effect:1||Spin relaxation:1||Quantum dots:1||carrier lifetime:1||proximity effect:1||anomalous Hall effect:1||Magnetic multilayer:1||Magnetic multilayers:1||multivalued memory device:1||tunneling magnetoresistance (TMR):1||Transport:1||Semiconducting IIVI materials:1||cadmium compounds:1||Doping:1||Quantum dot:1||ferromagentism:1||TMR:1||Rashba effect:1||

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