ScholarWorks@Korea University: Kwon, Kwang Ho

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Kwon, Kwang Ho (권광호)

Department of Control and Instrumentation Engineering

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Tel 041-860-1447
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ICP:10||Etching:10||Etching mechanism:8||Dissociation:8||Ionization:8||etch rate:7||ionization:6||Etch mechanism:6||etch mechanism:6||polymerization:6||Polymerization:6||Ion energy flux:6||etching:6||dissociation:6||Modeling:6||Energy Harvesting:6||Etching rate:5||Etch rate:5||XPS:5||PZT:5||Plasma:5||Plasma treatment:5||MEMS:5||Plasma etching:4||OES:4||global warming potential:4||Piezoelectric:4||Cantilever:4||Fluorocarbon gases:4||Halogen atom flux:4||Effective reaction probability:4||reaction kinetics:4||Diagnostics:4||Etching Mechanism:4||Etching kinetics:4||Si and SiO2 etching rates:4||ParyleneC:4||Plasma modeling:4||Inductively coupled plasma:3||Active species:3||Energy harvesting:3||Roughness:3||HBr/Ar plasma:3||QMS:3||Etching selectivity:3||Plasma Diagnostics:3||Plasma diagnostics:3||TiO2:3||Neural network:3||ZnO:3||ZrO2:3||plasma diagnostics:3||Oxygen atom flux:3||Cl2/Ar plasma:3||Langmuir probes:3||ion energy flux:3||effective reaction probability:3||Silicon Nitride:3||Polyimide:3||Fluorocarbon plasma:2||plasma:2||Preprocessor:2||TSV:2||argon:2||Xray photoelectron spectroscopy:2||etching yield:2||Reaction probability:2||Raman spectroscopy:2||Humidity sensor:2||Amorphous carbon film:2||gas mixtures:2||fluorine atom flux:2||plasma parameters:2||Reaction rate:2||Dielectric properties:2||Room Temperature:2||cantilever:2||Reflector:2||Reaction kinetics:2||Plasma Treatment:2||HfO2:2||DLP:2||Reactive particle beam:2||Ion bombardment:2||Plasma parameter:2||Parameters:2||Sidewall chemistry:2||Etching Rate:2||Ar:2||Bias voltage:2||Polymer:2||Rate coefficient:2||Cl2/Ar:2||PECVD:2||ICP CVD:2||active species:2||Etching residue:2||SiC:2||CF4 plasma:2||modeling:2||Langmuir probe:2||SiO2:2||Polymerizing species flux:2||Silicon dioxide:2||diagnostics:2||Surface characteristics:2||Al2O3:2||Y2O3:2||HBr:2||Nanopattern:1||Silicon nitride:1||Fluorine atom flux:1||SiOxNy:1||Plasma diagnostics and modeling:1||Etching mechanisms:1||Field effect transistor:1||Emission intensity:1||Barium titanate:1||MoS2:1||Etching Mechanisms:1||Perfluorocyclobutane:1||LowTemperature SiNix:1||Double Langmuir probe:1||Diamondlike carbon:1||Boron:1||bond graph:1||coupling:1||Films:1||Spectroscopy:1||silicon compounds:1||Raman:1||SiO₂:1||O2/CF4 plasma:1||electron impact dissociation:1||Chemical bonding nature:1||Kinetics of Chemical Changes:1||Effect quantification:1||Factor effect analysis:1||Interaction effect:1||zirconium compounds:1||InP:1||surface:1||ammonia:1||chemical oxide:1||selectivity:1||Active species kinetics:1||Dielectric constant:1||UV radiation:1||Insitu ion sputtering:1||Etching Yield:1||Perfluoromethylcyclohexane:1||Sidewall:1||Fluorination:1||Fluorocarbon Polymer:1||Inner Two Parallel Cylindrical ICPCVD:1||Lowtemperature SiO2:1||Mo:1||Trench Capacitor:1||PVPh:1||Bimorph Cantilever:1||piezoelectric:1||Nanocrystalline silicon:1||semiconductor thin films:1||SF_6:1||Etch characteristic:1||helium:1||plasma chemistry:1||plasma simulation:1||Ammonia gas sensor:1||MWCNT:1||Crystallinity:1||N2O and O2 Inductively Coupled Plasmas:1||oxidebased metaloxidesemiconductor:1||Cl2/HBr:1||Polymer deposition:1||Statistical experimental design:1||BCl3/O2 plasma:1||paryleneC:1||recovering:1||yttrium silicate:1||Cl2 and HBrBased plasmas:1||ion energy and flux:1||Global Warming Potential:1||SiOC:1||Plasma chemistry:1||Low frequency bias power:1||Sidewall analysis:1||perfluorocarbon:1||silicon oxynitride:1||Active Species Flux:1||Silicon Oxynitride:1||Ion behavior:1||Octafluorocyclobutane:1||Thermal isolation layer:1||Porosity:1||Si and SiO2 Etching Rates:1||Etching Selectivity:1||LiIon Battery:1||Modification:1||Free surface energy:1||Low temperature:1||Degradation characteristic:1||Etch:1||deposition:1||ICP source:1||hydrogen compounds:1||plasma density:1||N2O plasma modeling:1||LCMO:1||VO2 Thin Films:1||Phenol Formaldehyde Based Polymeric Films:1||VO2:1||Charging:1||Main effect:1||Dissociation kinetics:1||silica:1||etch threshold:1||BCl3/Ar plasma modeling:1||VO₂:1||dodecafluorooxepane:1||heterogeneous reaction kinetics:1||Dielectric Constant:1||Plasma Etching Damage:1||Plasma parameters:1||C4F8based plasma:1||Silicon Etching Rate:1||Effective Reaction Probability:1||Graphene film:1||F atom flux:1||Difluoromethane:1||reaction rate:1||Optical emission spectroscopy:1||CH2F2:1||Neutral flux:1||Energy Flux.:1||C4F8 Plasma:1||CHF3/O2 and C4F8/O2 plasma:1||Nanoimprint lithography:1||Antiadhesive layer:1||CF4 and CHF3Based Plasmas:1||energy harvester:1||broadband:1||power:1||Resonant Frequency:1||O2/Cl2/Ar plasma:1||O2:1||SiNx:1||NanoAg Ink:1||Functional applications:1||Etched Profile:1||Silicon Master:1||Resonant frequency:1||IV:1||FTIR:1||Polyaniline:1||Nitrousoxide plasma:1||Microbolometer:1||plasmainduced charging damage:1||Antenna:1||Trap:1||ceramics:1||plasma applications:1||Pt:1||etching mechanism:1||LPFC Gas:1||Surface Characteristics:1||Ion flux:1||dry etching:1||lowGWP gas:1||halogen atom flux:1||Thermal conductivity:1||Solgel deposition:1||C4F8:1||Passivation:1||Triboelectric Generator:1||Tetrafluoromethane, chlorine, hydrogen bromide, plasma:1||Carbon Nanotube:1||Inner Two Parallel ICPCVD:1||Resistivity:1||MWCNT film:1||Surface modification:1||TFT:1||Single Crystal:1||PMNPT:1||Micromachining:1||energy harvesting:1||piezoelectricity:1||Electrical properties:1||Bosch process:1||Al_2O_3:1||nonuniformity:1||Lowtemperature:1||LBMO:1||TCR:1||Heat conservation:1||ICP etching:1||MOSFET:1||Statistical regression model:1||thin films:1||BCl3/Ar and BCl3/CHF3/Ar plasma modeling:1||Ba2Ti9O20:1||Cl2/Ar plasma modeling:1||lowfrequency bias power:1||amorphous carbon layer:1||Bias frequency:1||Tilted Xray photoelectron spectroscopy:1||liquidstate perfluorocarbon:1||Etching Profile:1||KNbxOy thin film:1||Octafluorocyclobutane plasma:1||Mesoporous:1||Triboelectric generator:1||Nanocomposite:1||O2/Ar Plasma:1||Graphene Thin Film:1||Treatment:1||Surface Modification:1||CF4 and C4F8Based Plasmas:1||Degradation mechanism:1||Separator:1||Broadband Resonance:1||Thin films:1||Molybdenum:1||Aluminum oxide:1||Plasma model:1||vibration:1||piezoelectric cantilever:1||Neural Network:1||Two Inner Parallel Cylindrical Coil ICPCVD:1||O2/CHF3:1||Flexible display:1||Via filling:1||Nanopaste:1||Nanoimprint:1||HBrbased plasma:1||Cl2:1||Nano imprint lithography:1||Onchip curing:1||nitrogen:1||reaction kinetics theory:1||LSMO:1||Mesoporous oxide:1||Inductively Coupled Cl2/Ar Plasma:1||Reactive Particle Beam assisted sputtering system:1||Silicon oxide:1||CF4/O2 etching mechanism:1||density:1||Oxygen plasma:1||C4F8&#8208:1||fluorocarbon gas plasma:1||plasma modeling:1||inductively coupled plasma etching:1||ionassisted etching:1||plasma etching:1||Nanopatterning:1||Perfluorocarbon:1||Graphene directive transfer:1||Ion momentum flux:1||Polydimethylsiloxane:1||Etching process mechanism:1||HCl:1||Tetrafluoromethane:1||Stainlesssteel:1||Etch, ICP:1||Copper foil:1||Surface energy:1||Metal Liner:1||vibration energy harvesting:1||Etched slope:1||Neutral particle beam assisted sputtering system:1||GaZnO:1||Local curing technique:1||Plasma funtionalization:1||MWCNT/polymer composite:1||CMR:1||Etching Characteristics:1||Ellipsometry:1||ITO:1||Langmuir probe system:1||Plasma damage:1||Process:1||Ba2Ti9O20(BTO):1||Cl2/Ar plasma modeling:1||sputtering:1||HBr plasma:1||Silicon Oxycarbide (SiOC):1||Radical flux:1||fluorocarbon gases:1||low frequency bias power:1||Gas mixing ratio:1||Residue formation:1||SiOxNy etching rate:1||etching characteristics:1||Graphene direct transfer mechanism:1||Etched profile:1||Graphene transfer:1||Residue:1||Indium Phosphide:1||CF4:1||Molybdenum disulfide:1||Polyethylene terephthalate:1||Plasma Etching:1||Plasma Modeling:1||Plasmapolymerized film:1||CH2F2 Plasma:1||Low Temperature:1||Silicon:1||Resonance frequency:1||Dielectric Liner:1||Optical band gap:1||Resonance Frequency:1||Etch Mechanism:1||Contact angle:1||Ba_2Ti_9O_20(BTO):1||Amorphous silicon:1||Internal strain:1||Resistance:1||Local curing:1||Plasma density:1||Reliability:1||oxygen:1||interface control:1||rate coefficient:1||based plasma:1||C6F12Ocontaining plasma:1||etching kinetics:1||ionassisted chemical reaction:1||Si etching rate:1||Damage:1||HAR:1||

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