ScholarWorks@Korea University: Shin, Changhwan

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Shin, Changhwan (신창환)

공과대학 (전기전자공학부)

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negative capacitance (NC):2||positive feedback:2||steep switching:2||hafnium zirconium oxide:1||3D NAND flash:1||Z(2)FET:1||vertical gateallaround:1||Switches:1||Voltage measurement:1||Capacitance:1||charge boost:1||pulse measurements:1||surface scattering effect:1||automatic model selection:1||tapered channel:1||FBFET:1||Hysteresisfree:1||structural variation:1||flexible biointegrated electronic systems:1||nanowire channel:1||nanosheet FET:1||metal ferroelectric insulator semiconductor (MFIS):1||ADFET:1||device characteristics:1||short channel effects:1||metalinsulatorferroelectricmetal (MIFM) capacitor:1||biofluid transmission rate measurement:1||magnesium sensors:1||organic thin film encapsulation:1||ferroelectronics:1||van der Waals ferroelectric heterostructures:1||macaroni channel:1||PF device:1||MOSFET:1||Pulse measurements:1||CMOS inverter:1||chamber temperature:1||polarization:1||FinFET:1||short channel effect:1||Q measurement:1||Charge measurement:1||Ferroelectric materials:1||complementary FET (CFET):1||junctionless (JL) FET:1||junctionless accumulation mode (JAM) FET:1||pinhole detection:1||processinduced random variation:1||ferroelectric capacitor:1||endurance:1||inverter circuit:1||Bayesian neural network:1||buried channel array transistor:1||Capacitors:1||ferroelectric semiconductors:1||metalferroelectricmetal (MFM) capacitor:1||selfheating effect (SHE):1||Line edge roughness (LER):1||

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