ScholarWorks@Korea University: Shin, Changhwan

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Shin, Changhwan (신창환)

College of Engineering

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FinFET:4||endurance:4||oxygen vacancy:4||technology computeraided design (TCAD):3||ferroelectric:3||steep switching:3||NAND gate:2||rapid thermal annealing:2||positive feedback:2||Pulse measurements:2||negative capacitance (NC):2||Capacitors:2||fatigue:2||inverter:2||selfheating effect (SHE):1||Line edge roughness (LER):1||strain sensor:1||stretchable device:1||ferroelectric semiconductors:1||hafnium zirconium oxide:1||3D NAND flash:1||Z(2)FET:1||vertical gateallaround:1||Switches:1||Voltage measurement:1||Capacitance:1||charge boost:1||pulse measurements:1||wakeup:1||uFinFET:1||grain size:1||Ni barrier:1||NOR gate:1||DRAM:1||line edge roughness:1||Deep Learning:1||Control variable:1||surface scattering effect:1||automatic model selection:1||tapered channel:1||Hysteresisfree:1||FBFET:1||structural variation:1||GANbased framework:1||Epitaxial growth:1||metal oxide semiconductor fieldeffect transistor (MOSFET):1||punchthroughstopper (PTS):1||yield enhancement:1||Ni barrier layer:1||dual fielddriven ion transportation:1||autocovariance function (ACVF):1||Language Translation:1||filament formation:1||bipolar resistive switching (BRS):1||flexible biointegrated electronic systems:1||nanowire channel:1||nanosheet FET:1||Temperature measurement:1||ferroelectrics (FEs):1||subthreshold slope (SS):1||lowpowerdevice:1||gateallaround fieldeffect transistor (GAAFET):1||random variation:1||grain boundary:1||metal ferroelectric insulator semiconductor (MFIS):1||photoacoustic transmitter:1||ADFET:1||device characteristics:1||short channel effects:1||metalinsulatorferroelectricmetal (MIFM) capacitor:1||Iron:1||imprint:1||Substrates:1||Ag/HfO2based TS device:1||Ag ions:1||Complementary fieldeffect transistor (CFET):1||Automated Greenhouse:1||biofluid transmission rate measurement:1||magnesium sensors:1||organic thin film encapsulation:1||ferroelectronics:1||van der Waals ferroelectric heterostructures:1||macaroni channel:1||PF device:1||MOSFET:1||Behavioral sciences:1||Fluorine passivation:1||Silicon germanium:1||hafnium zirconium oxide (HZO):1||Oxygen vacancy:1||Reducing the effective area:1||subthreshold swing:1||Transformer:1||volatile memory:1||CMOS inverter:1||chamber temperature:1||polarization:1||short channel effect:1||Q measurement:1||Charge measurement:1||Ferroelectric materials:1||machine learning:1||Delays:1||Zirconium:1||ferroelectric film:1||Logic gates:1||leakage current:1||controllable Ag ions:1||BCAT:1||flash memory:1||complementary FET (CFET):1||junctionless (JL) FET:1||junctionless accumulation mode (JAM) FET:1||pinhole detection:1||processinduced random variation:1||ferroelectric capacitor:1||Processinduced random variation:1||polarization switching speed:1||Gateallaround fieldeffect transistor (GAAFET):1||interlayer:1||negative differential resistance:1||magnetic fieldassisted threshold switching:1||taper angle variation:1||resistive randomaccess memory (RRAM):1||complementary resistiveswitching (CRS):1||grainsize:1||feedback field effect transistor (FBFET):1||inverter circuit:1||Bayesian neural network:1||nanocomposites:1||buried channel array transistor:1||metalferroelectricmetal (MFM) capacitor:1||reliability:1||wakeup effect:1||HAO:1||SOI FinFET:1||device design:1||Doping:1||FinFETs:1||Silicon:1||Threshold switching:1||selfhealing:1||saddle fin:1||HfO x:1||

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